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Present investigation reports the synthesis of stable as well as visible-light active CdS/Ag 2 O nanocomposite photocatalysts in three varied ratios to be engaged in degradation of methylene blue (MB) dye. As-synthesized photocatalysts have been characterized with the aid of diverse characterization techniques such as X-ray diffraction (XRD), FT-Raman, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), UV-visible and Photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM). XRD pattern clearly depicts the presence of hexagonal CdS phase and cubic Ag 2 O phase. Results show a remarkable enhancement of photocatalytic activity for MB degradation especially for CdS/Ag 2 O nanocomposite with maximum efficiency up to 88.8 %. Moreover, the effective bandgap of CdS/ Ag 2 O (1 : 2) nanocomposite has been significantly reduced to 1.71 eV from pure CdS (2.15 eV). It can be derived that CdS/ Ag 2 O photocatalysis may be envisaged for treatment of diluted waste water containing organic pollutants. Figure 13. Reusability of CdS/Ag 2 O (1 : 2) nanocomposite for degradation of MB. ChemistrySelectFull Papers

In the present work, we report on the study of InGaP/Ge heterojunctions grown by metal organic vapor phase epitaxy at different growth temperatures, with the aim of analyzing properties of the layer and interface between InGaP epilayer and germanium substrate. Secondary Neutral Mass Spectroscopy, Rutherford Backscattering Spectrometry, High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy have been used to characterize the layers. The main goal of this work is to get information about diffusion processes of Ga, In, P in the substrate and of Ge in the epitaxial film. Since the interface roughness during sputtering and the effect of diffusion depends on the growth temperature, depth profiles measured experimentally were combined with surface roughness data in order to get more reliable information about diffusion profiles and the real depth distribution of elements in the interface. which negatively affects the device performance. 45In the present paper, we performed the study of InGaP/Ge thin films 52Experimental 53 The InGaP films were grown on Ge (001) introduction of the precursors into the reactor chamber. In order to 62 obtain the same composition for all the samples, the ratio of In/Ga 63 was varied from 1.1 to 1.4, while the ratio of V/III groups elements 64 ranged from 95 to 87. The InGaP was not intentionally doped.

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