Influence of Ta-based Diffusion Barriers on the Microstructure of Copper Thin Films

Stangl, M.; Fletcher, Alison; Acker, Jörg; Wendrock, H.; Wetzig, K.

doi:10.1007/s11664-007-0289-z

Cited by 11 publications

(10 citation statements)

References 24 publications

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“…Since the variability in the values listed in Table 1 cannot be ascribed to the plating parameters, other possible causes were investigated. In a previous study where full wafers were used, In the past literature several groups, including Ueno and co-workers, ascribed such differences to variability in thickness [7][8][9][10]12]. In our work, no variation of plating power across the small plating area is expected, and profilometry measurements and FIB cross sections coupled with SEM analysis confirmed that uniform thickness was achieved for all coupons.…”

Section: Iv-2 Effect Of Cu Seed Layer Texturesupporting

confidence: 69%

“…2 is approached through imposing tight controls on plating current, time, and chemistry [2][3][4][5][6][7][8][9][10][11][12].…”

mentioning

confidence: 99%

“…To obtain a better metric of sample repeatability we used real-time synchrotron x-ray diffraction [3,13] to study microstructural changes from electroplated films deposited with a variety of frequently employed, phenomenological plating parameters. These included plating time and film thickness [4,13], seed layer deposition methodology [5,6], seed layer and plated film texture [7,8], diffusion barrier chemistry [9,10], and impurity concentration [11,12].…”

mentioning

confidence: 99%

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Prediction of recrystallization times in electroplated copper thin films

Treger

Witt

Cabral³

et al. 2016

Thin Solid Films

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Room temperature recrystallization responses of blanket electroplated Cu thin films deposited under various conditions were monitored in real-time using synchrotron x-ray diffraction.Nominal control of electroplating parameters such as plating current, bath chemistry, and plating time was found to be insufficient to ensure repeatability of the 50% recrystallization time,, from sample to sample even though the thickness variations between samples were insignificant. Real-time x-ray analysis of samples from numerous electroplating baths showed that, for a given seed deposition process, a reliable estimation of at room temperature can be obtained from the ratio of the integrated intensities of the 111 and 200 Cu reflections, I ̅ / I ̅ , of the electroplated film at time zero (immediately after plating). Among the plating parameters investigated seed-layer texture most influenced this ratio and, hence, the subsequent room temperature recrystallization behavior of the plated film.

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Section: Iv-2 Effect Of Cu Seed Layer Texturesupporting

confidence: 69%

“…2 is approached through imposing tight controls on plating current, time, and chemistry [2][3][4][5][6][7][8][9][10][11][12].…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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Prediction of recrystallization times in electroplated copper thin films

Treger

Witt

Cabral³

et al. 2016

Thin Solid Films

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“…When The resistivity decrease and α value change with the keeping time showed similar trends, and this suggests that grain growth was controlled by the film texture. While slight amount of {511} grains were reported to exist in addition to {111} and {100} grains in EBSD observation of Cu films [27][28][29][30], unfortunately the (511) Cu peak is out of range of 2θ in the θ-2θ scan using the Cu K α -ray, and thus the (511) texture was evaluated by θ scan, as mentioned before. Typical XRD spectra of the θ scan (2θ = 50.5°) for ten samples after keeping at RT for about 200 or more days are shown in Figure 4.…”

Section: Methodsmentioning

confidence: 99%

Role of Cu film texture in grain growth correlated with twin boundary formation

Kohama¹,

Ito²,

Matsumoto³

et al. 2012

Acta Materialia

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To understand the role of Cu film texture in grain growth at room temperature (RT) in relation to twin boundary formation, Cu films were deposited on various barrier materials, and Cu film texture was investigated by X-ray diffraction. The Cu grain growth was rapid on the barrierless SiO 2 /Si substrate, and very slow on the Ta barrier due to strong (111) texture. The growth rate and the average grain diameter after keeping at RT up to ~60 days were maximized at the (200) Cu peak to (222) Cu peak area ratio of ~1.0, where the {111}, {100}, and {511} grains coexisted. Such coexistence of three or more orientations of grains is essential for facilitating Cu grain growth at RT. Similarly, average twin boundary (TB) density was maximized when Cu grain growth was facilitated. The TB formation in nano-sized Cu grains was not controlled by grain size, but caused by grain growth. The TBs could be annealing twins caused by irregularities in stacking sequence during relatively fast grain growth. The Cu film texture is concluded to be determined at the early beginning of deposition, and wettability of various barrier materials to the Cu films plays a key role in determining the film texture.

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“…Consequently, the mechanical and electrical properties of the metallization need to be tailored to match the requirements of the assembly technology. If an electro-chemical deposition (ECD) of Cu is implemented in the process chain, the microstructure of the commonly sputtered seed-layer is partly passed on to the ECD layer [4].…”

Section: Introductionmentioning

confidence: 99%