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Electroplated Cu films exhibit a microstructure evolution at room temperature, called self-annealing. The kinetics of this recrystallization process is strongly influenced by plating conditions in the form of Cu film thickness, current density, and additive content in the electrolyte. Existing models have been used and improved to describe the kinetics of self-annealing. This gives the possibility to evaluate the influence of processing parameters and predict self-annealing behavior of electroplated Cu thin films.