Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

Effect of NiOx’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

“…Among these, the RF sputtering technique has been widely used to obtain non-stoichiometric NiO x films due to its industrial scalability, that is, the properties of the films have been controlled by changing sputtering conditions like substrate temperature, O 2 flow rate and RF power [9,19]. With respect to our previously published paper [20] and to the studies reported in the literature [21–23], in this work, we investigated the effect of the thickness of NiO x films on the electrical properties of Ni/p-NiO x /n-Si devices. Accordingly, changes in diode parameters as a result of film thickness were discussed correlating the structural and morphological characteristics of the films with the electrical properties.…”

Production of spin coated chromium oxide (CrO3) thin layers and application in the Al/p-Si metal semiconductor structures

“…Gupta and Yakuphanoğlu [16] informed that n and BH of Al/In 2 O 3 /p-Si juntion were determined to be 1.07 and 0.72 eV, respectively. Reddy et al [17] have found that the values of BH and n for Al/Ta 2 O 5 /p-Si junctions with varying the thickness of Ta 2 O 5 layer between 20 nm and 60 nm are 0.58 eV, 2.35, 0.71 eV, 2.10 and 0.78 eV, 1.87 for 20, 40 and 60 nm, respectively. Mohan et al [18] obtained that the BH and n values were 0.911 eV and 2.120 in dark for the Al/Yb 2 O 3 :Cu/p-Si contact having Cu dopant density of 4.5 wt% in Yb 2 O 3 layer.…”

“…The BH modification occupies a huge research field in semiconductor device electronics. Many studies have been performed by using the different oxide interlayers in the MS diodes [14][15][16][17][18][19][20][21][22]. According to table 2, the diode quantities of Al/CrO 3 /p-Si contact are compared with those of other oxide/p-Si devices described below [14][15][16][17][18][19][20].…”

“…Many studies have been performed by using the different oxide interlayers in the MS diodes [14][15][16][17][18][19][20][21][22]. According to table 2, the diode quantities of Al/CrO 3 /p-Si contact are compared with those of other oxide/p-Si devices described below [14][15][16][17][18][19][20]. The Al/CrO 3 /p-Si diodes outperform any existing similar contacts on several important basic contact parameters based on the comparison.…”

“…Interfacial dielectric layer in the metal-interlayer-semiconductor (MIS) diode structures obtained by inserting an interlayer in metal/semiconductor (MS) structures significantly affect the barrier height (BH, Φ b ) and interfacial states. [14][15][16][17][18][19][20][21][22][23]. In this layer, the metal and semiconductor are separated from each other, and the transition between charges is adjusted.…”