Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering

Gan, Jiantuo; Svensson, B. G.; Monakhov, Edouard

doi:10.1016/j.tsf.2015.05.029

Cited by 37 publications

(21 citation statements)

References 28 publications

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“…The calculated optical E g values can be obtained as 2.51 ± 0.02 eV, 1.65 ± 0.1 eV, and 1.42 ± 0.01 eV for Cu 2 O, Cu 4 O 3 , and CuO, respectively. These are consistent with the previous reported results [2,4,7,12,15,28]. Furthermore, the measured results of the band gap indicate that, although the morphologies of the films under various O 2 partial pressures are different, the band gap value of each type of single-phase copper oxide remains almost constant.…”

Section: Resultssupporting

confidence: 92%

“…The transmittance and reflectance spectra for different copper oxides deposited under various total pressures are present in Figure 4. By using the Tauc relation, one can estimate the E g values from the transmittance and reflectance [12,28]:

{(α h υ)}^{n} = A (h υ - E_{g})

where hν is the incident photon energy, and A is a constant related to the materials. The magnitudes of n are considered to be 2, 1/2, 3, and 3/2 corresponding to allowed direct, allowed indirect, forbidden direct, and forbidden indirect transitions, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Clearly,

ρ_{{Cu}_{2} normalO} > ρ_{{Cu}_{4} O_{3}} > ρ_{CuO}

. The resistivity values of CuO thin films are nearly 2 magnitudes less than those of Cu 2 O and Cu 4 O 3 , which should be attributed to the higher intrinsic carrier density of CuO [28,35,36]. The measured result indicates that the Cu 2 O film with the largest resistivity has the largest band gap and the least Cu valence state, while the CuO film with the least resistivity has the smallest band gap and the largest Cu valence state.…”

Section: Resultsmentioning

confidence: 99%

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The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

et al. 2018

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P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.

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Section: Resultssupporting

confidence: 92%

{(α h υ)}^{n} = A (h υ - E_{g})

Section: Resultsmentioning

confidence: 99%

“…Clearly,

ρ_{{Cu}_{2} normalO} > ρ_{{Cu}_{4} O_{3}} > ρ_{CuO}

Section: Resultsmentioning

confidence: 99%

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The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

et al. 2018

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“…The MSE of the fit for the as-grown and annealed Cu 2 O thin film was 7.9 and 10.0, respectively. Based on the measured transmittance spectra, a Tauc plot analysis was made to determine the optical band gap of the AZO and as-grown and annealed Cu 2 O thin films [22]. The analysis (data not shown) suggests that the optical band gap is increased from E g = 2.23 eV for the as-grown Cu 2 O film to E g = 2.38 eV after annealing.…”

Section: Refractive Index and Surface Morphologymentioning

confidence: 99%

Optical Analysis of a ZnO/Cu<sub>2</sub>O Subcell in a Silicon-Based Tandem Heterojunction Solar Cell

Nordseth¹,

Kumar²,

Bergum³

et al. 2017

GSC

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Research on silicon-based tandem heterojunction solar cells (STHSC) incorporating metal oxides is one of the main directions for development of high-efficiency solar cells. In this work, the optical characteristics of a STHSC consisting of a ZnO/Cu 2 O subcell on top of a silicon-based subcell were studied by optical modelling. Cu 2 O is a direct-gap p-type semiconductor which is attractive for application in solar cells due to its high absorptance of ultra-violet and visible light, nontoxicity, and low-cost producibility. Highly Al-doped ZnO and undoped Cu 2 O thin films were prepared on quartz substrates by magnetron sputter deposition. Thermal annealing of the Cu 2 O layer at 900˚C enhances the electrical properties and reduces optical absorption, presumably as a result of increased grain size. Hall effect measurements show that the majority carrier (hole) mobility increases from 10 to 50 cm 2 /V⋅s and the resistivity decreases from 560 to 200 Ω⋅cm after annealing. A Cu 2 O absorber layer of 2 µm thickness will generate about 10 mA/cm 2 of photocurrent under AM1.5G illumination. The optical analysis of the STHSC involved calculating the spectral curves for absorptance, transmittance, and reflectance for different thicknesses of the thin film layers constituting the ZnO/Cu 2 O subcell. The complex refractive indices of the thin films were derived from spectroscopic ellipsometry measurements and implemented in the simulation model. The lowest reflectance and highest transmittance for the ZnO/Cu 2 O subcell are obtained for a thickness of approximately 80 nm for both the top How to cite this paper: Nordseth, Ø.,

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“…Especially, Cu x O thin films are potential for photovoltaic applications, due to their good properties such as high absorption coefficient in the visible region, elemental abundance, non-toxicity and stability with the characteristicofbeing"ultra-low-cost".Their direct optical band gap energy is in the range of (2.1 to 2.6 eV) for Cu 2 O and (1.21 to 2.1 eV) for CuO [18][19][20][21][22]. Copper oxide thin films had been fabricated by various techniques such as electrodeposition [23], pulsed laser deposition [24], sol-gel technique [21], spay pyrolysis [25] …etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of angle deposition γ on the structural, optical and electrical properties of copper oxide zigzag (+γ, −γ) nanostructures elaborated by glancing angle deposition

et al. 2018

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In this work, Cu x O thin films were obtained by air annealing of copper thin films deposited on glass substrates using thermal evaporation method by Glancing Angle Deposition "GLAD" technique. The copper was sculptured into a zigzag shape, which presents two columns with inclined angles + and-where is the deposition angle between the incident flux and the substrate normal. Morphological, structural, optical and electrical properties of the obtained thin films were investigated using X-ray diffraction (XRD), UV-Vis-NIR Spectroscopy and electrical resistivity measurements. The XRD patterns revealed that thin films deposited at different incident angles are mainly crystallized in Cu 2 O cubic phase characterized by the preferential orientation along (111) plane. The optical parameters were calculated from the analysis of the transmittance and reflectance spectra in the wavelength range 300-1800 nm. Theabsorptioncoefficient exceeds 10 5 cm-1 in the visible and NIR spectral ranges. Direct band gap energy increases from 2 to 2.54 eV with deposition angle. The in-plane birefringence and the anisotropic resistivity of the Cu 2 O films were also studied. Their maxima were obtained at incident flux angle of = 60°. Therefore, the GLAD technique is a promising way to create zigzag nanostructures with enhanced anisotropic properties.

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Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering

Cited by 37 publications

References 28 publications

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Optical Analysis of a ZnO/Cu<sub>2</sub>O Subcell in a Silicon-Based Tandem Heterojunction Solar Cell

Effect of angle deposition γ on the structural, optical and electrical properties of copper oxide zigzag (+γ, −γ) nanostructures elaborated by glancing angle deposition

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Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering

Cited by 37 publications

References 28 publications

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Optical Analysis of a ZnO/Cu&lt;sub&gt;2&lt;/sub&gt;O Subcell in a Silicon-Based Tandem Heterojunction Solar Cell

Effect of angle deposition γ on the structural, optical and electrical properties of copper oxide zigzag (+γ, −γ) nanostructures elaborated by glancing angle deposition

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Product

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Optical Analysis of a ZnO/Cu<sub>2</sub>O Subcell in a Silicon-Based Tandem Heterojunction Solar Cell