Influence of Te and Se doping on ZnO films growth by SILAR method

Study of Se/Te-doped Cu2O as a hole transport material in perovskite solar cells

“…For example, Lin et al 10 prepared nanotubes with different ratios of Te and Se/Te doped TiO 2 , and found that the absorption coefficient was considerably enhanced in the visible spectrum, and the absorption edge had a strong red shift. Güney and Duman 11 prepared ZnSeO and ZnTeO thin films by changing the doping ratios of Se and Te, and obtained a significant decrease from 3.37 eV (pure ZnO) to 2.26–2.60 eV. Liu et al 12 studied S-, Se- and Te-doped NaTaO 3 using the first-principles calculations, and obtained similar results for bandgap, in addition, the carrier mobility, and its difference between electrons and holes, was all significantly larger than that of pure NaTaO 3 , which could effectively reduce the recombination of electrons and holes.…”

Influence of Annealing Temperature on the Structural and Optical Properties of Tellurium-Doped ZnO Thin Films for Optoelectronic Applications

“…These dopants cause variations in physical and optical properties for ZnO, after different treatments of oxygen and zinc. One of the suitable dopants is Tellurium (Te) [4]. Te is a group VIA (Oxygen, Sulphur, Selenium and Tellurium) chalcogen family element.…”

SILAR yöntemi ile büyütülen katkısız ve Zn katkılı CdO yariiletken ince filmlerinin yapisal, optik ve morfolojik özelliklerinin incelenmesi

“…SILAR yönteminde katkılama yapmak için katkı yapılacak olan organik ya da inorganik madde katyonik ve anyonik çözelti içerisine katılarak gerçekleştirilebilmektedir. Diğer bir avantajı ise kolaylıkla üçlü hatta dörtlü bileşikler yapılabilmektedir [13]. En önemli farklılıklarından biri de taban malzeme tercihi olmayışı ve altlık boyutunun önemi olmayışıdır.…”