Influence of temperature on morphological and optical properties of MoS2 layers as grown based on solution processed precursor

Gomes, Francis Oliver Vinay; Pokle, Anuj; Marinkovic, Marko; Balster, Torsten; Canavan, Megan; Fleischer, K.; Anselmann, Ralf; Nicolosi, Valeria; Wagner, Veit

doi:10.1016/j.tsf.2017.10.022

Cited by 13 publications

(7 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The minor difference in FWHM between electrochemically obtained MoS 2 and the geological MoS 2 crystal is attributed to the polycrystalline nature of the layers, which has more grain boundaries and related imperfections. A reported study shows that crystal grain size of MoS 2 increases with increasing post-annealing temperature [13]. Similarly, HR-TEM also shows high crystal quality for samples annealed at 900 °C [13] which is consistent with our measured Raman results.…”

Section: Resultssupporting

confidence: 91%

“…A reported study shows that crystal grain size of MoS 2 increases with increasing post-annealing temperature [13]. Similarly, HR-TEM also shows high crystal quality for samples annealed at 900 °C [13] which is consistent with our measured Raman results.…”

Section: Resultssupporting

confidence: 91%

“…It can be used in switching devices such as a field effect transistor and in hydrogen evolution reaction because of its suitable band-structure [5,6]. TMDCs thin films have been deposited by various deposition methods such as pulsed laser deposition [7], chemical vapor deposition (CVD) [8,9], mechanical exfoliation [5], liquid-phase exfoliation [10], dip-coating [11,12] and spin-coating [13]. Fabrication of transistors is also reported by solution-based processes such as spin-coating and liquid-phase exfoliation [10,14].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

2021

Self Cite

View full text Add to dashboard Cite

Large area MoS2 ultra-thin film deposition is one of the big challenges in the recent years. Electrodeposition provides an opportunity to grow such ultra-thin films on large scale. However, the transfer of the electrochemically grown film is challenging. Standard transfer of those thin films is done by wet etching in which the underlying substrate is etched. In this work, the polymer coated electrodeposited MoS2 films on Au are separated mechanically from the underlying substrate by using ultra-sonication. Collapse of micron-sized bubbles produced by ultra-sonication at the interface of Au and silicon substrate provides enough energy for separation due to their weak adhesion. The Au layer is then removed by standard Au-etchant (K/KI) and the polymer coated film is transferred to a desired substrate. Ammonium tetrathiomolybdate (ATTM) has been used as precursor material for the electrodeposition of the films. Initial electrochemically grown films consist of MoS3 which is reduced to MoS2 by a post-annealing step at 450–900 °C. Obtained films are investigated by AFM, Raman, UV–Vis and XPS. Crystal quality improves by increasing the post-annealing temperature. The thickness of the thinnest film was found to be equivalent to 2 monolayers of MoS2, which is desirable for future electronics. Graphic abstract

show abstract

Section: Resultssupporting

confidence: 91%

Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…To analyse the S2p we used multiple S2p3/2, S2p1/2 doublets with a fixed spin orbit split of 1.202 eV and a line shape described by a sum of a Gaussian and Lorentzian peak (SGL, 10% Gauss). Both splitting and shape had been previously determined on highly ordered, epitaxial MoS2 layers measured in the same instrument 29 . To describe the asymmetric line shape of the PEDOT related sulphur component with a minimum number of additional fitting parameters, an exponential asymmetric blend of the SGL shape was used.…”

Section: Assessment Of Crosslinking: Xps Ft-ir Dispersion Studymentioning

confidence: 99%

PEDOT:PSS interfaces stabilised using a PEGylated crosslinker yield improved conductivity and biocompatibility

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…24 The presence (absence) of the E 1g mode has been reported in several works for MoS 2 layers with vertical (horizontal) orientation. 1,12,24,42,43 For example, together with the decrease in the E 1 2g /A 1g intensity ratio for the vertically oriented films (when compared to the planar oriented films), Shokhen et al also observed the appearance of the E 1g peak for MoS 2 grown on molybdenum foil. 1 Therefore, the appearance of the E 1g mode provides further confirmation of the presence of vertically oriented MoS 2 nanosheets.…”

Section: Resultsmentioning

confidence: 98%

Ellipsometric Investigation of Thick Vertically Oriented MoS₂ Films Grown on Mo Foil at High Temperatures

2021

View full text Add to dashboard Cite

Thin films of MoS2 with vertically aligned layers have been less investigated than their horizontal counterparts although they find important applications in energy storage, catalysis, and solar energy harvesting. Many applications require precise control of the film thickness and homogeneity. In this context, spectroscopic ellipsometry is a powerful technique that allows precise determination of the film thickness and evaluation of the film homogeneity and crystallinity from the features of the dielectric function spectrum. Homogeneous films of MoS2 were grown by chemical vapor deposition by sulfurizing Mo foils in sulfur vapor at atmospheric pressure in the 800–1000°C temperature range. The surface topography obtained by scanning electron microscopy images was characterized by vertical structures with a platelet-like morphology. Fractured cross sections showed compact MoS2 films with uniform thickness and a columnar morphology compatible with a vertical orientation of the layers. The vertical alignment was confirmed by Raman spectroscopy which showed an E1 2g to A1g peak ratio of around 0.3. The ellipsometric spectra could be adequately modeled with two-phase (MoS2/air) or three-phase (Mo/MoS2/air) models depending on the MoS2 film thickness. The polycrystalline structure of the MoS2 film was evidenced in the small amplitude of excitonic features in the complex dielectric function. The film thickness rapidly increases with formation temperature at high temperatures. Whereas at 650 °C, the film has a thickness of 40 nm, it increases from 200 to 1000 nm in the 800–1000°C temperature range after a growth time of 10 min.

show abstract

Influence of temperature on morphological and optical properties of MoS2 layers as grown based on solution processed precursor

Cited by 13 publications

References 39 publications

Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

PEDOT:PSS interfaces stabilised using a PEGylated crosslinker yield improved conductivity and biocompatibility

Ellipsometric Investigation of Thick Vertically Oriented MoS₂ Films Grown on Mo Foil at High Temperatures

Contact Info

Product

Resources

About

Influence of temperature on morphological and optical properties of MoS2 layers as grown based on solution processed precursor

Cited by 13 publications

References 39 publications

Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

PEDOT:PSS interfaces stabilised using a PEGylated crosslinker yield improved conductivity and biocompatibility

Ellipsometric Investigation of Thick Vertically Oriented MoS2 Films Grown on Mo Foil at High Temperatures

Contact Info

Product

Resources

About

Ellipsometric Investigation of Thick Vertically Oriented MoS₂ Films Grown on Mo Foil at High Temperatures