Influence of the additive Ag for crystallization of amorphous Ge–Sb–Te thin films

Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films

“…The abrupt drop in sheet resistance is known as amorphous-crystalline phase transition and temperature corresponding to onset of drop is known as phase transition temperature. These values of the transition temperature are in good agreement with reported values in the literature [6]. It has been observed that Ag photodoped GeTe samples have higher sheet resistance in amorphous as well as crystalline state and lower transition width that might be due to the increase in the surface roughness to enhance the scattering of charge carriers.…”

“…The photodoping results in the increase of the optical gap with an accompanied decrease in the value of tailing parameter for the as-prepared GeTe and GeTe:Ag samples. Similar variation in optical parameters summarized in this work has been reported for Ag incorporation in Ge 2 Sb 2 Te 5 doped during the synthesis of the bulk alloys [6,10]. They believed that the additive Ag atom acts as a dopant without a large change in the atomic configuration basic network of the amorphous Ge 2 Sb 2 Te 5 film.…”

“…where E o is the indirect optical gap, B 1/2 is the slope in the extended region which related to the tailing parameter for the disordered materials [6,19,20] (Table 1). Fig.…”

“…It has been reported by high resolution X-ray photoelectron spectroscopy that the structural environment of Ge atom changes during phase transition and not its chemical environment [5]. The sandwiched Ag-rich Ge-Te electrolyte films in the programmable metallization cell structure have shown the promising performance for their non-volatile random access memory applications [6][7][8]. It has been found to improve many of the device parameters, yet the random nature of impurity as well as their concentration due to phase separation effect limits the complete understanding of their properties.…”

Fast reversible laser-induced crystallization of Sb-rich Zn-Sb-Se phase change material with excellent stability

“…At the same laser power of 70mW, t T is labelled by the arrows in Fig. 5, which represent the threshold pulse duration time, 21 are ∼95, ∼35, and ∼27ns for above-mentioned films. Moreover, t c defined as the crystallization time for complete amorphous-to-crystalline process as marked by the arrows are ∼230, ∼180, and ∼80ns for these films, which are shorter than that of GST film (∼280ns).…”