Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

Gilfert, C.; Pavelescu, E.‐M.; Reithmaier, Johann Peter

doi:10.1063/1.3428956

Cited by 54 publications

(27 citation statements)

References 13 publications

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“…Recently, in an attempt to realize InAs Qdots on (100) InP using MBE, Gilfert et al [45] found that the arsenic species had a dramatic effect on the formation of nanostructures on InGaAlAs buffer layer. The As 4 supply during InAs deposition resulted in Qdash formation on InGaAlAs whereas As 2 supply produced round-shaped Qdots structures with density 2.0×10 10 cm -2 , as shown in Figs.…”

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…So far only a few studies regarding InAs QDs on lattice matched InGaAlAs as a buffer layer have been reported [9,10].…”

Section: Introductionmentioning

confidence: 99%

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Banyoudeh

Reithmaier

2015

Journal of Crystal Growth

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“…10 that the detected CER signal is the order of 10 -5 DR/R. When an InAs layer is deposited on an InP substrate both regular QDs and elongated QDs (so called quantum dashes) can be formed depending on the growth conditions [52]. For both QDs and quantum dashes (QDashes) a wet− ting layer is formed but the quantum confinement for elec− trons is much weaker for InAs/InP system than for InAs/ GaAs one due to a smaller conduction band offset at the InAs/InP interface.…”

Section: Quantum Dots and Dashesmentioning

confidence: 99%

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Misiewicz

Kudrawiec

2012

Opto-Electronics Review

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The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.

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Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

Cited by 54 publications

References 13 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

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