Influence of the autocombustion synthesis conditions and the calcination temperature on the microstructure and electrochemical properties of BaCe0.8Zr0.1Y0.1O3−δ electrolyte material

Thabet, Kawther; Devisse, M.; Quarez, Éric; Joubert, Olivier

doi:10.1016/j.ssi.2018.07.030

Cited by 6 publications

(10 citation statements)

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“…The practical incorporation of the hydrogen composition is more associated to the hydrogen aggregation and passivation of the grain boundaries and interfacial defects within SmNiO 3 , and this elevates the electrical conduction along the defective regions. It is also worth noticing that the proton conductions for oxides were reported to occur within grains, [26] grain boundaries, [27,28] and even along the surface, [29,30] while it also enriches the way to regulate the transportations associated to grain boundaries, i.e., via the tunneling regime. [31,32] Considering the herein observed much higher cross-plane conductions for hydrogenated polycrystalline Pt/SmNiO 3 /SrRuO 3 /Si compared to single crystalline Pt/SmNiO 3 /SrRuO 3 /LaAlO 3 at their similar hydrogen concentration, the dominant proton conduction within SmNiO 3 should be associated to the grain boundary.…”

Section: Doi: 101002/adma201905060mentioning

confidence: 99%

Electron‐Doping Mottronics in Strongly Correlated Perovskite

et al. 2019

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Hydrogen (proton) induced switchable multiphase transformations in d-band electron-correlated materials recently opened a new field for exploring merging multifunctional proton-gated electronic devices, [1] synaptic plasticity, [2,3] sensors, [4] and novel energy conversion devices. [5] Compared to other dopant elements, hydrogen is small in radius and has high ionic mobility. [1,[4][5][6] Therefore, the proton distribution is highly adjustable via external electric fields, and the respective tuning of the physical properties of materials is feasible. This is, in particular, the case for the hydrogen-induced sharp transitions in electron orbital configurations and the magnetoelectric/spintronic states for d-band electron-correlated materials, such as SmNiO 3 , [1][2][3][4][5] SrCoO 3−δ , [6] and VO 2 . [7] As a typical example, the hydrogenation of the perovskite-structured SmNiO 3 d-band electron-correlated system results in an abrupt electronic transition of the e g orbital from the electron-itinerant Ni 3+ t e 2g 6 g 1 state to the electron-localized Ni 2+ t e 2g 6 g 2 The discovery of hydrogen-induced electron localization and highly insulating states in d-band electron correlated perovskites has opened a new paradigm for exploring novel electronic phases of condensed matters and applications in emerging field-controlled electronic devices (e.g., Mottronics). Although a significant understanding of doping-tuned transport properties of single crystalline correlated materials exists, it has remained unclear how dopingcontrolled transport properties behave in the presence of planar defects. The discovery of an unexpected high-concentration doping effect in defective regions is reported for correlated nickelates. It enables electronic conductance by tuning the Fermi-level in Mott-Hubbard band and shaping the lower Hubbard band state into a partially filled configuration. Interface engineering and grain boundary designs are performed for H x SmNiO 3 /SrRuO 3 heterostructures, and a Mottronic device is achieved. The interfacial aggregation of hydrogen is controlled and quantified to establish its correlation with the electrical transport properties. The chemical bonding between the incorporated hydrogen with defective SmNiO 3 is further analyzed by the positron annihilation spectroscopy. The present work unveils new materials physics in correlated materials and suggests novel doping strategies for developing Mottronic and iontronic devices via hydrogen-doping-controlled orbital occupancy in perovskite heterostructures.

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Section: Doi: 101002/adma201905060mentioning

confidence: 99%

Electron‐Doping Mottronics in Strongly Correlated Perovskite

et al. 2019

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“…Figure 5A shows that the C value corresponding to peak P1 is 3 × 10 −9 F. Based on the C value, P1 is ascribed to the grain‐boundary arc of the proton‐conducting BZCY. The relaxation time of the grain boundary ( τ gb ) for BZCY at 350°C is 1 × 10 −6 s. Nevertheless, the grain‐boundary arc in Figure 5B is divided into two parts (eg R gb 1 and R gb 2), and the corresponding C values are 1.06 × 10 −8 F and 8 × 10 −8 F, respectively, which are close to the grain‐boundary transport 40,42 . The detailed analysis in the DRT shows that the grain‐boundary response is separated into two peaks: P1 ( τ 1 = 1.59 × 10 −6 s) and P2 ( τ 2 = 1.58 × 10 −5 s) 43 .…”

Section: Resultsmentioning

confidence: 91%

“…The relaxation time of the grain boundary (τ gb ) for BZCY at 350°C is 1 × 10 −6 s. Nevertheless, the grain-boundary arc in Figure 5B is divided into two parts (eg R gb 1 and R gb 2), and the corresponding C values are 1.06 × 10 −8 F and 8 × 10 −8 F, respectively, which are close to the grain-boundary transport. 40,42 The detailed analysis in the DRT shows that the grain-boundary response is separated into two peaks: P1 (τ 1 = 1.59 × 10 −6 s) and P2 (τ 2 = 1.58 × 10 −5 s). 43 This phenomenon is caused by the two types of grain boundaries in the BL91 composite material: the first grain boundary originates from the BZCY-to-BZCY grain contact and the LSGM-to-LSGM grain contact (R gb 1); the second one comes from BZCY-to-LSGM grain contact (R gb 2).…”

Section: Electrical Propertymentioning

confidence: 99%

Enhancing the sinterability and electrical properties of BaZr_0.1Ce_0.7Y_0.2O_3‐δ proton‐conducting ceramic electrolyte

Wang

Yang

et al. 2020

J. Am. Ceram. Soc.

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A novel strategy was proposed to enhance the sinterability and electrical properties of BaZr 0.1 Ce 0.7 Y 0.2 O 3-δ (BZCY) proton-conducting electrolyte by adding 10 wt.% La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3-δ (LSGM) to form a 90 wt.% BZCY-10 wt.% LSGM (BL91) composite electrolyte. XRD patterns showed that no reaction occurred between How to cite this article: Yu S, Wang Z, Yang L, et al. Enhancing the sinterability and electrical properties of BaZr 0.1 Ce 0.7 Y 0.2 O 3-δ proton-conducting ceramic electrolyte.

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“…However, some of challenges to manufacture a dense BCZY ceramic are the high sintering temperature typically 1500 to -1600 ° C [2][3][4][5][6], and the long processing duration in conventional method which can damage the material and cause barium evaporation resulting in a decrease of electrochemical properties [ 7 , 8 ]. Numerous studies have been carried out to improve ° C , for a sample of 92 % relative density [1]. In the same context, researches have shown that introducing sintering aids such as ZnO, NiO, CuO, or Al 2 O 3 [9][10][11][12][13], can often decrease the sintering temperature without lowering the electrochemical properties.…”

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confidence: 99%

“…The evolution of the electrochemical behavior of bulk and grain boundaries as function of the different process parameters is investigated. , was synthesized by nitrate-glycine method as described in previous work [1]. Stoichiometric amounts of metal nitrate salts precursors:…”

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confidence: 99%

Application of the cold sintering process to the electrolyte material BaCe0.8Zr0.1Y0.1O3-δ

Thabet

Quarez

Joubert

et al. 2020

Journal of the European Ceramic Society

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This paper describes and discusses the application of the original sintering process named cold sintering to the electrolyte material BaCe 0.8 Zr 0.1 Y 0.1 O 3δ to enhance its densification at a temperature below that needed in a conventional sintering. This new technique enables the acceleration of the densification resulting in a more compacted microstructure with an unexpected high relative density of 83 % at only 180 ° C. A subsequent annealing at 1200 ° C further enhances the densification which reaches 94 %. The electrochemical performance of CSP sintered ceramics was investigated and optimized by varying different process parameters. The comparison with the conventional sintered material reveals an increase of the total conductivity by mostly increasing the grain boundary one. This result emphasizes the benefits of CSP to not only reduce the sintering temperature but also to enhance the electrochemical properties.

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Influence of the autocombustion synthesis conditions and the calcination temperature on the microstructure and electrochemical properties of BaCe0.8Zr0.1Y0.1O3−δ electrolyte material

Cited by 6 publications

References 54 publications

Electron‐Doping Mottronics in Strongly Correlated Perovskite

Electron‐Doping Mottronics in Strongly Correlated Perovskite

Enhancing the sinterability and electrical properties of BaZr_0.1Ce_0.7Y_0.2O_3‐δ proton‐conducting ceramic electrolyte

Application of the cold sintering process to the electrolyte material BaCe0.8Zr0.1Y0.1O3-δ

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Influence of the autocombustion synthesis conditions and the calcination temperature on the microstructure and electrochemical properties of BaCe0.8Zr0.1Y0.1O3−δ electrolyte material

Cited by 6 publications

References 54 publications

Electron‐Doping Mottronics in Strongly Correlated Perovskite

Electron‐Doping Mottronics in Strongly Correlated Perovskite

Enhancing the sinterability and electrical properties of BaZr0.1Ce0.7Y0.2O3‐δ proton‐conducting ceramic electrolyte

Application of the cold sintering process to the electrolyte material BaCe0.8Zr0.1Y0.1O3-δ

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Enhancing the sinterability and electrical properties of BaZr_0.1Ce_0.7Y_0.2O_3‐δ proton‐conducting ceramic electrolyte