Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

Blood, P.; Fletcher, E. D.; Woodbridge, K.; Heasman, KC; Adams, A.R.

doi:10.1109/3.29281

Cited by 47 publications

(11 citation statements)

References 25 publications

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“…Further temperature dependent contributions may arise from higher sub-bands in the well (Blood et al , 1990 ). When the well is not the dominant current path temperature sensitivity may also arise from recombination in adjacent barrier material (Blood et al , 1989b ), and from thermally activated leakage over the heterobarrier ( Figs 1.4 and 1.5 ). If there is a contribution to the optical loss by free-carrier scattering of light then the increase in n with T will itself bring about an increase in optical loss.…”

Section: Quantum Wellsmentioning

confidence: 97%

Principles of semiconductor lasers

Blood

2013

Semiconductor Lasers

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Section: Quantum Wellsmentioning

confidence: 97%

Principles of semiconductor lasers

Blood

2013

Semiconductor Lasers

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“…Analysis of the rate of change of 'th with pressure indicates that now the loss mechanism involves the thermal excitation of electrons out of the well into the X and L satellite minima in the well and barrier regions [7]. This occurs because the quantum confinement energy of the f electrons decreases the sub-band energy gap to the satellite minima.…”

Section: Hydrostatic Pressure Studies Of Semiconductor Lasersmentioning

confidence: 97%

Strain in semiconductor structures and devices

Dunstan

Adams

1992

SPIE Proceedings

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We review the use of large strains both in the design and in the study of semiconductor structures and devices. Large hydrostatic pressures may be applied to samples and devices. This changes the band structure qualitatively without changing the crystal symmetry. We present some results obtained studying lasers by this technique, which reveal the loss mechanism dominating the threshold current. A new high-pressure determination of the InGaAs/GaAs band offset ratio will be discussed. Axial strain may be applied to samples, or may be built into semiconductor epilayers by using thin layers of non-lattice matched compounds. This changes the crystal symmetry in ways that can benefit device performance.It also enables the structure to depart from the substrate lattice constant, which gives a new freedom to device design. Some recent advances in the InGaAlAs strained-layer system will be described. / 487 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/22/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx 488 /

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“…[20] To control the thermionic emission and overflow of the carriers from QWs, increasing the barrier height or design a carrier block can effectively improve carrier confinement, and therefore, reduce threshold current for higher emission efficiency. Recently, to improve the GaN threshold and obtain highpower/high-temperature operation, an AlGaN electron-blocking layer was proposed and widely used.…”

Section: Electron Block (E-block) Layermentioning

confidence: 99%

Mode pattern analysis of gallium nitride-based laser diodes

et al. 2009

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In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.

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Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

Cited by 47 publications

References 25 publications

Principles of semiconductor lasers

Principles of semiconductor lasers

Strain in semiconductor structures and devices

Mode pattern analysis of gallium nitride-based laser diodes

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