Strain in semiconductor structures and devices

Dunstan, D. J.; Adams, A.R.

doi:10.1117/12.56995

Cited by 8 publications

(8 citation statements)

References 6 publications

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“…The WKB transmission probability depends not only on the incident energy but also on the potential band profile which in our case is self-consistently provided by the Monte Carlo simulation. It must also be remarked that the potential profile is modified by the image charge effect, slightly reducing the effective barrier height at the region near the contact, according to the following expression [26]:…”

Section: Simulated Devices and Monte Carlo Proceduresmentioning

confidence: 99%

Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

Pascual

Rengel

Martı́n

2007

Semicond. Sci. Technol.

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A Monte Carlo investigation of charge transport-including quantum tunnelling effects-across Schottky barriers (both n-type and p-type) in the reverse bias regime is presented. The effect of the variation of different quantities (such as the barrier height or the temperature) over the current density is discussed and extensively analysed. A thorough study of different internal magnitudes such as carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been carried out. In this way, a detailed description of microscopic charge transport in the depletion region associated with the Schottky contact is attained. Results evidence important quasi-ballistic characteristics in the region closer to the contact, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.

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Section: Simulated Devices and Monte Carlo Proceduresmentioning

confidence: 99%

Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

Pascual

Rengel

Martı́n

2007

Semicond. Sci. Technol.

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“…where N c and N d are, respectively, the effective density of states in the conduction band and the donor density. N c is defined as 2(2m * kT / h 2 ) 3/2 with m * being the majority carrier effective mass, m * = 0.077 m e for n-InP [4,36]. The experimental carrier concentrations depending on the temperature are calculated from the reverse bias C −2 -V characteristics in figure 3.…”

Section: The Current-voltage and Capacitance-voltage Characteristics ...mentioning

confidence: 99%

Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

Çetin¹,

Ayyıldız²

2005

Semicond. Sci. Technol.

103

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The temperature dependence of current-voltage (I-V ) and capacitance-voltage (C-V ) characteristics of the Au/n-InP Schottky barrier diodes has been measured in the temperature range of 80-320 K. The forward I-V characteristics are analysed on the basis of standard thermionic emission (TE) theory and the assumption of a Gaussian distribution of the barrier heights (BHs). It has been shown that the ideality factor decreases while the barrier height increases with increasing temperatures, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to inhomogeneity of the BHs, has a good linearity over the temperature range. The value of Richardson constant A * has been found to be 5.97 A cm −2 K −2 , which is close to the theoretical value of 9.4 A cm −2 K −2 for n-InP. Moreover, the temperature coefficient of the BH is found to be −3.16 × 10 −4 eV K −1 for Au/n-InP.

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“…Furthermore, according to equations (2a) and (2b) [49], the concentration of carriers at 1 M Hz can be obtained…”

Section: Resultsmentioning

confidence: 99%

Interfacial characteristics and leakage current transfer mechanisms in organometal trihalide perovskite gate-controlled devices via doping of PCBM

Wang

Zhang

Liu

et al. 2017

J. Phys. D: Appl. Phys.

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Two types of perovskite (with and without doping of PCBM) based metal-oxide-semiconductor (MOS) gate-controlled devices were fabricated and characterized. The study of the interfacial characteristics and charge transfer mechanisms by doping of PCBM were analyzed by material and electrical measurements. Doping of PCBM does not affect the size and crystallinity of perovskite films, but has an impact on carrier extraction in perovskite MOS devices. The electrical hysteresis observed in capacitance–voltage and current–voltage measurements can be alleviated by doping of PCBM. Experimental results demonstrate that extremely low trap densities are found for the perovskite device without doping, while the doped sample leads to higher density of interface state. Three mechanisms including Ohm’s law, trap-filled-limit (TFL) emission, and child’s law were used to analyze possible charge transfer mechanisms. Ohm’s law mechanism is well suitable for charge transfer of both the perovskite MOS devices under light condition at large voltage, while TFL emission well addresses the behavior of charge transfer under dark at small voltage. This change of charge transfer mechanism is attributed to the impact of the ion drift within perovskites.

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Strain in semiconductor structures and devices

Cited by 8 publications

References 6 publications

Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

Interfacial characteristics and leakage current transfer mechanisms in organometal trihalide perovskite gate-controlled devices via doping of PCBM

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