Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

Abstract

A Monte Carlo investigation of charge transport-including quantum tunnelling effects-across Schottky barriers (both n-type and p-type) in the reverse bias regime is presented. The effect of the variation of different quantities (such as the barrier height or the temperature) over the current density is discussed and extensively analysed. A thorough study of different internal magnitudes such as carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been carried out. In this way, a detailed description of microscopic charge transport in the depletion region associated with the Schottky contact is attained. Results evidence important quasi-ballistic characteristics in the region closer to the contact, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.

Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

“…It considers the most important transport processes across the Schottky interface, such as thermionic injection and absorption, together with tunneling processes (field emission and tunneling absorption), which are incorporated in the model using the Wentzel-Kramer-Brillouin approach [28], [29]. The reduction of the effective barrier [30], [31] due to the image force effect has also been carefully included [28]. The model has been calibrated with experimental data of large barrier height diodes taking the Richardson constant as the fitting parameter to provide zero current under equilibrium conditions [17].…”

“…The model has been calibrated with experimental data of large barrier height diodes taking the Richardson constant as the fitting parameter to provide zero current under equilibrium conditions [17]. It has provided also accurate results for fabricated back-to-back Schottky diodes [28], as well as compared with Atlas/Silvaco simulation for SB-MOSFETs [29]. The parameters of the 0018-9383 © 2014 IEEE.…”

Harmonic distortion in laterally asymmetric channel metal‐oxide‐semiconductor field‐effect transistors operating in the linear regime

“…The results were obtained by means of our in‐house 2D Monte Carlo simulator, which has been extensively calibrated with experimental measurements in several different types of MOSFETs and also in other silicon devices . The simulator is self‐consistently coupled to a Poisson solver and includes impurity, optical phonon, acoustic phonon, and surface scattering.…”

“…This modeling technique is usually recognized as one of the most reliable simulation procedures, allowing performing computer experiments , with the only constraint of very large CPU times. More details about our simulator can be found in .…”

Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET

“…The methodology employed to solve this 2D problem is detailed in [10]. The procedure has been properly calibrated with experimental results for the 1D study of Schottky diodes in [11] and back-toback structures in [12]. The main details of the MC model (band structure, scattering mechanisms, etc) are described in [13].…”