Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

Çetin, H.; Ayyıldız, E.

doi:10.1088/0268-1242/20/6/025

Cited by 103 publications

(67 citation statements)

References 42 publications

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“…Therefore, the BH is likely to be a function of the interface atomic structure and the atomic inhomogeneities at MS interface, which are caused by grain boundaries, multiple phases, facets, defects, a mixture of different phases, etc. [19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…[5][6][7] Quantum devices made from InGaAs/ InP heterostructures are of particular interest because of the existence of a high effective electron g-factor [8][9][10] and strong, tunable spin-orbit interaction in the InGaAs quantum well material. 11 However, studies of planar InGaAs quantum dot devices defined in InGaAs/InP heterostructures have been hindered by difficulties in device fabrication due to a low Schottky barrier formed in the interface between a metal and the heterostructure surface 12 and only very recently successful realizations of such InGaAs quantum dots in the manyelectron regime have been reported. 13,10 Here we report on realization of a few-electron quantum dot in an InGaAs/InP heterostructure by employing the technologies of local finger gating and wet chemical etching.…”

mentioning

confidence: 99%

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

Larsson

Nilsson

Hardtdegen

et al. 2009

Applied Physics Letters

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We report on the measurements of the g-factor and the exchange interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are identified. The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum-well layer) has a value in the range of |g∗|≈2 to |g∗|≈4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling, the lower bound of the exchange energy of electrons in the dot in the order of ∼210 μeV is extracted.

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“…Consideration of the deformation of the barrier distribution and thus modifying TE model can explain the behavior of with temperature. The higher values of n can be evaluated as a result of the deformation of spatial barrier distribution when a bias voltage is applied and related to this fact, a linear correlation between 0 and the n dependent on temperature as shown in Fig.2 [18]. As listed in Table 1, 0 decreases and n increases, with increase in temperature.…”

Section: Results and Discussion (Sonuçlar Vementioning

confidence: 87%

The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

Güllü¹,

Yıldız²

2018

Journal of Polytechnic

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SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias current-voltage (I-V) measurements. The main diode parameters were calculated according to the thermionic emission (TE) model and they were found in an abnormal behavior with change in temperate in which zero-bias barrier height ( 0 ) increases and ideality factor ( ) decreases with increasing temperature. Therefore, the total current flow though the junction was expressed by the Gaussian distribution (GD) of barrier height. The plot of 0 vs 2 ⁄ showed the existence of inhomogeneous barrier formation and evidence for the application of Gaussian function to identify the distribution of low barrier height patches. The mean barrier height was found as 1.274 with the 0.166 eV standard deviation. From the modified Richardson plot, Richardson constant was calculated as 119.5A/cm 2 K 2 in very close agreement with the reported values. Additionally, the effects of the series resistance ( ) were analyzed by using Cheung's function. Distribution of the interface states ( ) were extracted from the I-V characteristics and found in increasing behavior with decreasing temperature. Keywords: Sputtering technique, barrier height, Gaussian distribution, interface states.In/SnTe/Si/Ag Diyotunda Homojen Olmayan Engel Yüksekliği Analizi ÖZSnTe ince film katmanı magnetron saçtrıma tekniği ile n-Si alttaş üzerine büyütüldü, ve In/SnTe/Si/Ag diyot yapısının elektriksel özellikleri, sıcaklık bağımlı düz besleme akım-voltaj (I-V) ölçümleri kullanılarak incelendi. Temel diyot parametreleri termiyonik emisyon (TE) modeli temel alınarak hesaplandı ve sıcaklık artışı ile sıfır-potansiyel engel yüksekliğinin ( 0 ) artışı ve idealite faktörünün ( ) azalışı gibi ideal olmayan bir davranışta oldukları bulundu. Bu nedenle, eklemdeki toplam akım iletimi, engel yüksekliğinin Gauss dağılımı (GD) ile açıklandı. 0 vs 2 ⁄ eğrisi, yapıdaki homojen olmayan engel oluşumunu ve GD kullanılarak düşük bariyerli local bölgelerin dağılımının açıklanabileceğini gösterdi. 0.166 eV standart sapma ile birlikte ortalama engel yüksekliği 1.274 eV olarak bulundu. Etkin Richardson eğrisinden, Richardson sabiti, literatürdeki değerlere yakın bir değerde, 119.5A/cm 2 K 2 olarak hesaplandı. Ayrıca, Cheung fonksiyonu kullanılarak yapıdaki seri direnç ( ) etkisi analiz edildi. Arayüzey durumların yoğunluğu ( ) diyot yapısının I-V karakteristiğinden elde edildi ve azalan sıcaklık değerlerine göre artış yönünde bir davranış gösterdiği bulundu.Anahtar Kelimeler: Saçturma tekniği, engel yüksekliği, Gauss dağılımı, arayüzey durumları.

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Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

Cited by 103 publications

References 42 publications

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

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