Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Abstract

We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

“…Similar results have been reported [35]. Therefore, further studies are needed to clarify these results.…”

“…Although in previous studies focus has been on the reactions of germanium with Pd [6,[14][15][16][17][18][19][20][21][22][23], Pt [6,13,22,[24][25][26][27][28][29], and Ni [6,9,11,[13][14][15][16]22,[28][29][30][31][32][33][34][35][36][37][38], so far there is very little literature on reactions of germanium with Ir [39]. Gaudet et al [6] carried out a systematic study of thermally induced reaction of 20 transition metals with Ge substrates.…”

Opto-electronic characterization of starch capped zinc chalcogenides (core-shell) nanocomposites and their application as Schottky device

“…The high value of ideality factors are discussed by other researchers and their validations were laid on higher recombination through point defect states or trap-aided tunnelling [53]. Thus, the increase in ideality factor may be due to increasing inhomogeneity of contact, interfacial surface defects [54,55].…”

Growth and evolution of nickel germanide nanostructures on Ge(001)

“…Among all stable stoichiometric Ni-Ge phases, it is generally accepted that the Ni-Ge phase is best suited for ohmic metal contact formation, due to low sheet resistance, good stability under heat treatment, and low forming temperature [18,19]. In this context, the Ni-Ge system was intensively investigated by different experimental methods (such as transmission electron microscopy (TEM) [20,21], x-ray diffraction (XRD) [22,23], electrical characterization [24,25], and x-ray photoelectron spectroscopy (XPS) [26]) as well as theoretical calculations [27,28]. Most of these investigations were thus carried out by means of spatially averaging characterization techniques and only few methods with nanoscale resolution were applied to study in situ the Ni-Ge interaction [29].…”