Influence of the Carbon Content on the Crystallization and Oxidation Behavior of Polymer‐Derived Silicon Carbide (SiC)

Lehmann, T.; Baier, Johannes; Leineweber, Andreas; Kienzle, Andreas

doi:10.1002/adem.201500064

Cited by 12 publications

(6 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicon carbide (SiC), as a conventional wide band gap semiconductor, has been widely implemented in high-temperature semiconducting devices 25,26 and graphene growth substrates, 27,28 due to its low thermal expansion coefficient, chemical inertness, and mechanical durability. In terms of LIB applications, unfortunately, SiC was traditionally considered to be electrochemically inert, 29,30 such that it has been mainly used as a structural reinforcement agent to couple with highcapacity materials such as Si and SnO 2 for forming composite anodes.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Silicon carbide (SiC), as a conventional wide band gap semiconductor, has been widely implemented in high-temperature semiconducting devices , and graphene growth substrates, , due to its low thermal expansion coefficient, chemical inertness, and mechanical durability. In terms of LIB applications, unfortunately, SiC was traditionally considered to be electrochemically inert, , such that it has been mainly used as a structural reinforcement agent to couple with high-capacity materials such as Si and SnO 2 for forming composite anodes. − Thanks to the recent extensive research in Si-based anodes, a number of studies have shown that lithium ions can intercalate into the lattices of SiC upon appropriate structural design and surface modification, − suggesting that SiC could be electrochemically active toward lithium storage.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Bowl-like 3C-SiC Nanoshells Encapsulated in Hollow Graphitic Carbon Spheres for High-Rate Lithium-Ion Batteries

Zhang

et al. 2016

Chem. Mater.

View full text Add to dashboard Cite

Searching for new electrode materials with high capacities and excellent rate performance is crucial for the development of next-generation lithium-ion batteries (LIBs). Silicon carbide (SiC), which is traditionally considered to be electrochemically inert toward lithiation, has recently been demonstrated to be a potential high-performance anode material upon activation by surface graphitization. Despite the great potential, it remains a grand challenge to synthesize SiC nanostructures with precisely controlled morphologies and surface properties, due to the rather high reaction temperatures (>1200 °C) typically required for SiC crystallization. Herein, we designed and synthesized a novel type of SiC nanostructures in which bowl-like, ultrathin SiC nanoshells were encapsulated in hollow graphitic carbon spheres (designated as SiC@HGSs), which exhibited unexpectedly high electrochemical performance when used as LIB anodes. SiC@HGSs retained a stable capacity of 1345 mAh g −1 at a current density of 0.6 A g −1 after 600 cycles and 742 mAh g −1 at 3 A g −1 after 1000 cycles. Even at a high current density of 6 A g −1 , SiC@HGSs could still deliver a capacity of ∼400 mAh g −1 . The superior high-rate performance is attributable to the unique architecture and exceptional structural durability of SiC@HGSs.

show abstract

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bowl-like 3C-SiC Nanoshells Encapsulated in Hollow Graphitic Carbon Spheres for High-Rate Lithium-Ion Batteries

Zhang

et al. 2016

Chem. Mater.

View full text Add to dashboard Cite

show abstract

“…[4][5][6] Therefore, a wide range of SiC-based microsensing/electronics devices have been developed with several micromachining techniques. [7,8] Unlike silicon counterparts, SiC micromachining processes are undoubtedly limited and expensive due to the chemical inertness of SiC. For instance, SiC wet-etching processes typically requires extreme conditions and aggressive chemicals.…”

Section: Introductionmentioning

confidence: 99%

“…The advantages result from the high energy bandgap, mechanical strength, chemical inertness, and the high melting point of SiC . Therefore, a wide range of SiC‐based microsensing/electronics devices have been developed with several micromachining techniques . Unlike silicon counterparts, SiC micromachining processes are undoubtedly limited and expensive due to the chemical inertness of SiC.…”

Section: Introductionmentioning

confidence: 99%

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

et al. 2020

View full text Add to dashboard Cite

Silicon carbide (SiC)-based microsystems are promising alternatives for siliconbased counterparts in a wide range of applications aiming at conditions of high temperature, high corrosion, and extreme vibration/shock. However, its high resistance to chemical substances makes the fabrication of SiC particularly challenging and less cost-effective. To date, most SiC micromachining processes require time-consuming and high-cost SiC dry-etching steps followed by metal wet etching, which slows down the prototyping and characterization process of SiC devices. This work presents a lithography and etching-free microfabrication for 3C-SiC on insulator-based microelectromechanical systems (MEMS) devices. In particular, a direct laser ablation technique to replace the conventional lithography and etching processes to form functional SiC devices from 3C-SiC-onglass wafers is used. Utilizing a single line-cutting mode, both metal contact shapes and SiC microstructures can be patterned simultaneously with a remarkably fast speed of over 20 cm s À1. As a proof of concept, several SiC microdevices, including temperature sensors, strain sensors, and microheaters, are demonstrated, showing the potential of the proposed technique for rapid and reliable prototyping of SiC-based MEMS.

show abstract

“…[1][2][3][4][5] Silicon carbide finds applications in high power electronics (e.g., Schottky diode, transistors) and sensing devices including flame detection, gas sensing, thermal based sensors, and pressure sensors. [6][7][8][9] In addition, owing to the corrosive tolerance and mechanical robustness, SiC has also been utilized as a coating layer to improve the wear resistance of devices and instruments. [10,11] Among more than 200 types of SiC crystals, cubic silicon carbide, which can be epitaxially grown on Si substrates, has attracted great attention.…”

Section: Introductionmentioning

confidence: 99%

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

et al. 2017

View full text Add to dashboard Cite

This work presents fabrication of micro structures on sub-100 nm SiC membranes with a large aspect ratio up to 1:3200. Unlike conventional processes, this approach starts with Si wet etching to form suspended SiC membranes, followed by micro-machined processes to pattern free-standing microstructures such as cantilevers and micro bridges. This technique eliminates the sticking or the under-etching effects on free-standing structures, enhancing mechanical performance which is favorable for MEMS applications. In addition, post-Si-etching photography also enables the formation of metal electrodes on free standing SiC membranes to develop electrically-measurable devices. To proof this concept, the authors demonstrate a SiC pressure sensor by applying lithography and plasma etching on released ultrathin SiC films. The sensors exhibit excellent linear response to the applied pressure, as well as good repeatability. The proposed method opens a pathway for the development of self-sensing free-standing SiC sensors.

show abstract

Influence of the Carbon Content on the Crystallization and Oxidation Behavior of Polymer‐Derived Silicon Carbide (SiC)

Cited by 12 publications

References 26 publications

Bowl-like 3C-SiC Nanoshells Encapsulated in Hollow Graphitic Carbon Spheres for High-Rate Lithium-Ion Batteries

Bowl-like 3C-SiC Nanoshells Encapsulated in Hollow Graphitic Carbon Spheres for High-Rate Lithium-Ion Batteries

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

Contact Info

Product

Resources

About