Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Zheng, Xuefeng; Wang, Ao-Chen; Hou, Xiaohui; Wang, Yingzhe; Wen, Haoyu; Wang, Chong; Lu, Yang; Mao, Wei; Ma, Xiaohua

doi:10.1088/0256-307x/34/2/027301

Cited by 7 publications

(10 citation statements)

References 11 publications

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“…There are lots of researches on the GaN SBD, [17][18][19] and Ga 2 O 3 SBDs have attracted much attention recently. [20] In Ref.…”

Section: Design Of Ga 2 O 3 On Gan Sbdsmentioning

confidence: 99%

Modeling, simulations, and optimizations of gallium oxide on gallium–nitride Schottky barrier diodes

Fang¹,

Li²,

Xia³

et al. 2021

Chinese Phys. B

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With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium–nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer.

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“…There are lots of researches on the GaN SBD, [17][18][19] and Ga 2 O 3 SBDs have attracted much attention recently. [20] In Ref.…”

Section: Design Of Ga 2 O 3 On Gan Sbdsmentioning

confidence: 99%

Modeling, simulations, and optimizations of gallium oxide on gallium–nitride Schottky barrier diodes

Fang¹,

Li²,

Xia³

et al. 2021

Chinese Phys. B

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“…where, 0 g is the charge density of the unit volume of silicon ionized by 1Gy radiation, D  is the radiation dose rate (Gy/s), r  is the lifetime of carriers ionized by radiation. In this case, the electron-hole pairs ionized by radiation diffuse freely [11] and as a result, the electron-hole pairs disappear.…”

Section: Theoretical Model Of Electronic Devices With Electrical Characteristicsmentioning

confidence: 99%

Damage Mechanism Analysis and Protection Method of Ionizing Radiation Based on Electromagnetic Radiation Characteristics

et al. 2021

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This paper studies the damage mechanism and protection method of ionizing radiation damage based on electromagnetic radiation characteristics. In this paper, the ferroelectric layer polarization model was established based on the ferroelectric field effect transistor (FEFET) capacitance variation with gate voltage. This paper analyzed the ionizing radiation damage mechanism of electrical characteristics from two aspects of horizontal voltage and threshold voltage drift. The reinforcement design of the ferroelectric effect transistor was realized by using the anti-transient ionizing radiation reinforcement design method of the FPGA circuit. The three-fold redundancy design method based on instantaneous ionizing radiation effect was applied to protect electronic devices from ionizing radiation in reinforcement design. The results show that the threshold voltage drift caused by the oxide trap charge is proportional to the radiation dose. The threshold voltage drift caused by the interface trap charge is proportional to the radiation dose in the case of low dose, and the relationship is exponential when the radiation dose is greater than 60 krad SiO 2 . The delay signal of the FPGA circuit of the FEFET designed by the reinforcement has not been delayed again, to prove the effectiveness of ionizing radiation protection.

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“…Besides, a number of interfacial defects, mainly caused by the large lattice mismatch between GaN and the commonly used semiconductor materials (e.g., Si and SiC), will heavily degrade the device performance. [2,3] During the same period, two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoX 2 (X = S, Se) with favorable mechanical properties, intrinsic direct bandgap of 1.1-1.9 eV and giant spin-orbit coupling (SOC), have attracted extensive attention in electronic and optoelectronic devices. [4,5] Most importantly, these 2D TMD monolayers and GaN have almost perfect lattice match of less than 1%.…”

Section: Introductionmentioning

confidence: 99%

Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance

2022

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The GaN-based heterostructures are widely used in optoelectronic devices, but the complex surface reconstructions and lattice mismatch greatly limit the applications. The stacking of two-dimensional transition metal dichalcogenide (TMD = MoS2, MoSSe and MoSe2) monolayers on reconstructed GaN surface not only effectively overcomes the larger mismatch, but also brings about novel electronic and optical properties. Adopting the reconstructed GaN (0001) surface with adatoms (N-ter GaN and Ga-ter GaN), the influences of complicated surface conditions on the electronic properties of heterostructures have been investigated. The passivated N-ter and Ga-ter GaN surfaces push the mid-gap states to the valence bands, giving rise to small bandgaps in heterostructures. The charge transfer between Ga-terded surface and TMD monolayers occurs much easier than that across the TMD/N-ter GaN interfaces, which induces stronger interfacial interaction and larger valence band offset (VBO). The band alignment can be switched between type-I and type-II by assembling different TMD monolayers, that is, MoS2/N-ter GaN and MoS2/Ga-ter GaN are type-II, and the others are type-I. The absorption of visible light is enhanced in all considered TMD/reconstructed GaN heterostructures. Additionally, MoSe2/Ga-ter GaN and MoSSe/N-ter GaN have larger conductor band offset CBO of 1.32 and 1.29 eV, respectively, extending the range from deep ultraviolet to infrared regime. Our results revel that the TMD/reconstructed GaN heterostructures may be used for high-performance broadband photoelectronic devices.

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Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Cited by 7 publications

References 11 publications

Modeling, simulations, and optimizations of gallium oxide on gallium–nitride Schottky barrier diodes

Modeling, simulations, and optimizations of gallium oxide on gallium–nitride Schottky barrier diodes

Damage Mechanism Analysis and Protection Method of Ionizing Radiation Based on Electromagnetic Radiation Characteristics

Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance

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