Modeling, simulations, and optimizations of gallium oxide on gallium–nitride Schottky barrier diodes

Abstract

With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium–nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer.

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

“…[22] Three-dimensional technology computer aided design (3D TCAD) is a commonly used simulation tool with good operability and repeatability, and is useful in providing an insight into the physical mechanisms of SEEs and is widely used in the radiation effect research field. [23][24][25] Numerous heavy ion irradiation tests and TCAD simulation results have shown that the SET pulse width increases significantly with temperature rising, [26][27][28][29][30][31][32][33] and the number of measured SETs also increases. Cao et al investigated the variation of SEE cross section with temperature and frequency of 7-nm bulk silicon FinFET devices for α particle incidence.…”