Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

Abstract

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied.

Universal host materials for red, green and blue high-efficiency single-layer phosphorescent organic light-emitting diodes

“…In order to precisely study the impact of the incorporation of the electron-poor units within the three compounds, their properties will be compared to those of unsubstituted model compound spirophenylacridine-fluorene SPA-F (See molecular structure in the insert of Scheme 1). 33 Note that SPA-2,7-F(POPh 2 ) 2 and SPA-3,6-F(POPh 2 ) 2 are positional isomers, a key concept in organic chemistry, more and more used in the design of organic semi-conductors for electronics 55,56 (for Organic Field-Effect Transistors, [57][58][59] OLEDs, [60][61][62][63] or Organic Photovoltaics 64 ). In oxidation, SPA-2,7-F(POPh 2 ) 2 , SPA-3,6-F(POPh 2 ) 2 and SPA-2-FPOPh 2 present three successive oxidation waves with maxima reported in Table 1 and detailed electrochemical studies presented in SI.…”

Annealing effect on the electrical proprieties of IF(CN2)2-meta based OTFTs: Thermal behavior and modeling of charge transport

“…Initially the dihydroindenofluorene backbone was used to construct materials for fluorescent OLEDs [18][19], phophorescent OLEDs [20][21][22] and even solar cells [23]. More recently, dihydroindenofluorene backbone has also been used to construct electron-poor materials for n-type OFETs [24][25]. In the present work, the focus is brought on (IF(CN2)2-meta) derivative, this molecule has shown relatively correct electron mobility and electrical stability when used as active layer in OFET devices [26].…”

N-Cyanoimine as an electron-withdrawing functional group for organic semiconductors: example of dihydroindacenodithiophene positional isomers

“…Thus, defect density in the first layer of OSC has been decreased. 50 This effect could be linked to an increase of grain size. However, µ FE (generally improved when grain size increases) slightly decreases after annealing treatment.…”

“…In the IF-dione series, the disubstitution of the side phenyl rings of 1,2-b-IF(=O) 2 has widely been studied whereas it is almost absent for its regioisomer 2,1-b-IF(=O) 2 . 23,37,[47][48][49][50] Alkyl chains, 51 amines, 51 halogen atoms 32,52 or substituted thiophenes 53 57 ) have also been described, leading in some cases to highly efficient materials with low LUMO energy level and high µ FE such as in 1,2-b-IF(F 6 )(=O) 2 (LUMO= -3.53 eV, µ E = 0.16 cm² V -1 s -1 ). 32 Similarly, para-IDT(=O) 2 58, 59 (framed in green chart 2) or from its isomer meta-IDT(=O) 2 , (which synthesis has not been reported so far) have followed similar design strategies.…”