Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals

Arzig, Matthias; Künecke, Ulrike; Salamon, Michael; Uhlmann, Norman; Wellmann, Peter J.

doi:10.1016/j.jcrysgro.2021.126361

Cited by 6 publications

(5 citation statements)

References 37 publications

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“…This empirical observation was first conducted by Wilhelm Ostwald in 1897 [9]. Presently, progress is made in understanding how crystal growth occurs from molecular to nanocluster stages [10][11][12][13] and how factors such as solvent medium, saturation, temperature or presence of 'impurities' impact the crystallization product [14][15][16][17][18]. The influence of molecular chirality on crystal formation, as well as methods to determine the chiral outcome of a crystallization batch, were recently enhanced [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

A Lection in Humbleness: Crystallization of Chiral and Zwitterionic APIs Baclofen and Phenibut

et al. 2022

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Crystallization and multicomponent crystal formation of active pharmaceutical ingredients Baclofen and Phenibut with dicarboxylic acid co-formers are discussed. The crystallization process of several crystalline entities is elucidated via single crystal—as well as powder X-ray—diffraction, followed by thermal analysis and phase stability studies over time. Both APIs form increasingly complex crystalline phases with co-formers malic and tartaric acid, where phase purity of a desired compound is not necessarily a given. Therefore, the influence of different solution and milling environments during crystallization on the outcome is studied. Emphasis is laid on how molecular influences such as the chirality, propensity to form hydrates as well as low solubility of Baclofen and Phenibut impede attempts to gather high-quality single crystals. The results highlight that targeted crystallization of these compounds with dicarboxylic acids can be difficult and unreliable.

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Section: Introductionmentioning

confidence: 99%

A Lection in Humbleness: Crystallization of Chiral and Zwitterionic APIs Baclofen and Phenibut

et al. 2022

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“…Increased step bunching at higher growth pressures was also reported for the PVT growth of 4H-SiC. [24] However, this is more of an indirect effect based on a change in the C/Si ratio with an increased growth pressure. The reactive gas species attributing to the SiC growth, namely Si, SiC 2 , and Si 2 C, have different molecular sizes and, therefore, different transport properties.…”

Section: Influence Of Pressurementioning

confidence: 69%

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Kollmuß

Via

Wellmann

2023

Cryst. Res. Technol.

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A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

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“…In previous studies, researchers proposed a model explaining step motion. 27,28 When atoms are adsorbed to a step, they can move upwards to the upper terrace and combine with it, or they can move downward to join the current terrace. However, the probability of atoms moving in these two directions is different.…”

Section: Resultsmentioning

confidence: 99%

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

Guo,

Pei,

Yuan

et al. 2024

RSC Adv.

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Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals

Cited by 6 publications

References 37 publications

A Lection in Humbleness: Crystallization of Chiral and Zwitterionic APIs Baclofen and Phenibut

A Lection in Humbleness: Crystallization of Chiral and Zwitterionic APIs Baclofen and Phenibut

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

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