2015
DOI: 10.1039/c5cp00842e
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Influence of the interface in quantum corrections on the low-temperature resistance of La2/3Sr1/3MnO3 trilayer masking thin films

Abstract: We report the low-temperature resistance upturn in sandwiched structures of La2/3Sr1/3MnO3/ZrO2/La2/3Sr1/3MnO3 and La2/3Sr1/3MnO3/LaMnO3/La2/3Sr1/3MnO3, while it disappeared when the interlayer was replaced by YBa2Cu3O7. The experimental data have been analyzed qualitatively and quantitatively. The results show that the low temperature resistance upturn is mainly due to the quantum correction effects driven by the weak localization and the electron-electron interaction in such a strongly correlated system, and… Show more

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Cited by 4 publications
(3 citation statements)
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“…1 In general, the origin of this phenomenon has been attributed to the competition of two contributions. 39 One is the Coulomb blockade effect (CB, an electrostatic blockade of carriers between grains) 1,34,[40][41][42] of weak localization and strong electron-electron interaction with a disordered metallic state, based on which, the observed resistivity minimum can be expressed as: 43 r(T ) = A exp(E c /T ) 1/2 (1)…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…1 In general, the origin of this phenomenon has been attributed to the competition of two contributions. 39 One is the Coulomb blockade effect (CB, an electrostatic blockade of carriers between grains) 1,34,[40][41][42] of weak localization and strong electron-electron interaction with a disordered metallic state, based on which, the observed resistivity minimum can be expressed as: 43 r(T ) = A exp(E c /T ) 1/2 (1)…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…1,2 Later on, the Kondo effect was also observed in a concentrated system. 3 Aer that, resistivity minima similar to the Kondo systems have been observed in metallic glasses, 4,5 bulk ceramics, 6 epitaxially grown lms, 7,8 single crystals, 9 composite materials 10,11 etc. Extensive studies were performed both experimentally and theoretically to investigate the origin of the occurrence of these resistivity minima.…”
Section: Introductionmentioning
confidence: 78%
“…We have considered Matthiessen's rule as the measured resistivity is the sum of all the contributions. r(T) ¼ r 0 + r e-e (T) + r WL (T) + r mag (T) + r ph (T) (8) where r 0 is the residual resistivity, r e-e (T) is the contribution due to e-e interactions, r WL (T) is the contribution due to weak localization, r ph (T) is the phonon contribution and r mag (T) is the magnetic contribution. So the expression for the resistivity can be explicitly written as:…”
Section: Electrical Resistivitymentioning
confidence: 99%