Influence of the misorientation of 6H–SiC substrate on the quality of GaN epilayer grown by MOVPE

Qu, Shuang; Wang, Chengxin; Li, Shuqiang; Xu, Xiangang; Shao, Huihui; Yan, Peng; Gao, Yuqiang; Chen, Xiufang

doi:10.1016/j.jallcom.2010.12.150

Cited by 6 publications

(2 citation statements)

References 30 publications

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“…In-polar InN films were grown by plasma-assisted molecular beam epitaxy (SVTA) on GaN (0001) substrates with vicinal angles varying from 0.35° to 2.0° towards the m-direction. The growth temperature was controlled just below the boundary temperature for dissociation to improve the crystal quality [23] , and the In/N ratios were maintained under a slightly In-rich condition [ 23 , 24 ]. The surface and quality of the samples were analyzed by atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD), respectively.…”

Section: Methodsmentioning

confidence: 99%

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Liu

Sheng

Wang

et al. 2022

Fundamental Research

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Section: Methodsmentioning

confidence: 99%

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Liu

Sheng

Wang

et al. 2022

Fundamental Research

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“…There have been many attempts [3][4][5][6][7][8][9][10] to grow GaN on off-axis SiC using MOVPE (metalorganic chemical vapour phase epitaxy) and MBE (molecular beam epitaxy), but despite some encouraging results, the common opinion is that 4 degrees off substrates give unacceptable morphology of GaNlayers and cannot be used for good devices.…”

Section: Introductionmentioning

confidence: 99%

Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

Leszczyński

Prystawko

Kruszewski

et al. 2014

MSF

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So far, most of the SiC homoepitaxy has been realized on 8-deg-off and 4-deg-off substrates, whereas GaN heteroepitaxy is done on SiC on-axis (up to 0.3 deg off). As 6-inch SiC wafers are being introduced into the market, a decrease of the substrate off-cut to 2 deg for SiC homoepitaxy is desirable to reduce the manufacturing costs. If both, GaN heteroepitaxy and SiC homoepitaxy are successful on 2-deg-off SiC substrates, this would pave the way to monolithic integration of both kinds of devices, as well as to obtain cheap insulating SiC substrates for AlGaN/GaN microwave and THz devices. In this work, we present our present status of AlGaN/GaN growth on SiC 2-deg off. Comparing to the on-axis situation, we obtained similar structural (XRD and TEM data) and electrical characteristics, but not morphological ones. Therefore, we propose two ways of a decrease of AlGaN surface roughness when grown on SiC 2 deg-off: i) by planarization, ii) by lateral patterning.

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Study of optical properties of bulk GaN crystals grown by HVPE

Ren

Zhou

et al. 2016

Journal of Alloys and Compounds

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Influence of the misorientation of 6H–SiC substrate on the quality of GaN epilayer grown by MOVPE

Cited by 6 publications

References 30 publications

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

Study of optical properties of bulk GaN crystals grown by HVPE

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