Influence of the selenium flux on the growth of Cu(In,Ga)Se2 thin films

Hanna, G.; Mattheis, Julian; Laptev, V. I.; Yamamoto, Yukio; Rau, Uwe; Schock, H.W.

doi:10.1016/s0040-6090(03)00242-6

Cited by 81 publications

(41 citation statements)

References 11 publications

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“…Many reported solvothermal preparations involve the reaction of constituent elements (Cu, In, Ga and Se) or their salts in heated solution for several hours even several days [10,12]. Ethylenediamine (en) (C 2 H 8 N 2 ) has often been employed as a solvent in the preparation of CIGS, and the synthesized CIGS powders were formed with a mixture of different phases [13,15]. However, we could mention that the low boiling point of ethylenediamine (116°C) is a drawback in potential solvothermal preparations of CIGS.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Marai

Djessas

Ayadi

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Marai

Djessas

Ayadi

et al. 2015

Journal of Alloys and Compounds

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“…Results found in the literature show that the highest efficiency of 18.5% has been achieved [1]. However, properties of these materials are dominated by defect states that are related to the technological conditions of the growth processes; therefore in order to improve the optical and electrical properties of films many preparation techniques such as metalorganic vapor phase epitaxy [2,3], alternate-feeding physical vapor deposition [4], molecular beam epitaxy [5,6], stacked elemental layer [7] and coevaporation [8,9] have been investigated.…”

Section: Introductionmentioning

confidence: 99%

Influence of selenization temperature on the properties of CuInSe ₂ thin films prepared by spin coating technique

Merdes

Bechiri

Hadjoub

et al. 2006

Phys. Status Solidi (c)

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CuInSe 2 (CIS) polycrystalline thin films have been prepared using the spin coating technique by thermal decomposition in N 2 +H 2 (10%) gas of Cu-In Naphthenates and subsequent selenization in vacuum sealed ampoules of the obtained precursors with Se vapor. This technique which requires low vacuum process and low cost processing equipment is suitable for obtaining large area films and mass production. In this paper we report on the influence of selenization temperature on the growth process. Thus, samples have been prepared with different precursor compositions and selenized at various temperatures .A post-growth annealing has also been carried out. Crystal growth was followed versus the different selenization temperatures until the formation of CuInSe 2 phase. Structure, crystal orientation and morphology of the obtained experimental films were studied by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM). Polycrystalline films with a single (112) mainly oriented chalcopyrite phase have been obtained.

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“…New knowledge about the radiation physics of defects in CIGS material will indubitably assist a deeper understanding of the geometric and electronic structure of not only radiation defects but also growth defects formed during formation of CIGS thin films that determine the perfection of the material crystal structure. Herein we describe experiments that establish the nature of the radiation defects in CdS/Cu(In,Ga)Se 2 /Mo (CdS/CIGS/Mo) heterostructures, on which solar cells with efficiency ~12-14% are based [4,7,8].Experimental. The studied CIGS films were sputtered onto glass substrates coated with a thin film of Mo with simultaneous co-evaporation of Cu, In, Ga,[7][8][9].…”

mentioning

confidence: 99%

“…Herein we describe experiments that establish the nature of the radiation defects in CdS/Cu(In,Ga)Se 2 /Mo (CdS/CIGS/Mo) heterostructures, on which solar cells with efficiency ~12-14% are based [4,7,8].…”

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Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

et al. 2010

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Thin films of Cu(In, Ga)Se 2 (CIGS) with a Ga/(Ga + In) ratio of ~0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission (T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties in the asgrown and electron-irradiated CIGS films. The band-gap energy (E g ) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands in the PL spectra of the irradiated CIGS films, P 1 at ~0.91 eV and P 2 at ~0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (Cu In ) and indium vacancies V In , respectively, as the simplest radiation-induced defects.Introduction. Fabrication of highly efficient solar cells based on Cu(In,Ga)Se 2 (CIGS) semiconducting films is a critical and simultaneously complicated scientific and technical problem of modern semiconducting solar energy [1,2]. The development and improvement of the technology for preparing solar cells using CIGS compounds with the chalcopyrite structure has recently enabled efficiency records (~19.9%) to be set for all known thin-film semiconducting materials [1]. The stable operation of solar cells based on CIGS compounds that are used under ordinary terrestrial conditions and, especially, that are exposed to penetrating radiation (high-energy electrons, protons, etc.) in near-earth space orbits to an even greater extent stimulate further scientific and technological developments of semiconducting solar photovoltaics based on these materials [1][2][3][4][5]. Such promising developments prompt investigations that determine the criteria for radiation resistance of CIGS semiconducting compounds and solar cells based on them to the action of high-energy particles and that establish the nature of the radiation-induced defects at the atomic level [3][4][5][6]. New knowledge about the radiation physics of defects in CIGS material will indubitably assist a deeper understanding of the geometric and electronic structure of not only radiation defects but also growth defects formed during formation of CIGS thin films that determine the perfection of the material crystal structure. Herein we describe experiments that establish the nature of the radiation defects in CdS/Cu(In,Ga)Se 2 /Mo (CdS/CIGS/Mo) heterostructures, on which solar cells with efficiency ~12-14% are based [4,7,8].Experimental. The studied CIGS films were sputtered onto glass substrates coated with a thin film of Mo with simultaneous co-evaporation of Cu, In, Ga,[7][8][9]. Layers of CdS (~50 nm thick) were deposited by the standard chemical method in the corresponding solutions. The studied CdS/CIGS/Mo/glass structures consisted of a CdS buffer layer (~50 nm), CIGS films (~1.5 μm thick), a contact layer of Mo (~0.8 μm thick), and the glass substrate (2 mm thick). The elemental compositio...

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Influence of the selenium flux on the growth of Cu(In,Ga)Se2 thin films

Cited by 81 publications

References 11 publications

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Influence of selenization temperature on the properties of CuInSe ₂ thin films prepared by spin coating technique

Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

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Influence of the selenium flux on the growth of Cu(In,Ga)Se2 thin films

Cited by 81 publications

References 11 publications

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Influence of selenization temperature on the properties of CuInSe 2 thin films prepared by spin coating technique

Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

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Influence of selenization temperature on the properties of CuInSe ₂ thin films prepared by spin coating technique