Influence of the semiconductor-oxide interlayer on the AC-behaviour of InSb MOS-capacitors

Heime, A.; Pagnia, H.

doi:10.1007/bf00896894

Cited by 17 publications

(12 citation statements)

References 15 publications

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“…Formation of an interface layer has also been discussed by several other groups for their MIS systems. [17][18][19][20] The frequency dispersion in depletion region is due to the presence of interface traps as has been explained for the case of sample A. The total capacitance in inversion is increasing with decreasing frequencies.…”

Section: Resultsmentioning

confidence: 70%

Electrical properties of fluorinated amorphous carbon films

Biswas

Harris

Wang

et al. 2001

Journal of Applied Physics

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Articles you may be interested inEffect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of CF 4 -CH 4 gas mixtures Electrical and optical properties of amorphous fluorocarbon films prepared by plasma polymerization of perfluoro-1,3-dimethylcyclohexane J.We have studied the capacitance-voltage (C -V), conductance-voltage (G -V), and currentvoltage characteristics of fluorinated amorphous carbon (a-C:F x ) films using metal/a-C:F x /Si and metal/a-C:F x /metal structures, respectively. Samples annealed in a vacuum were also studied. The C -V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1ϫ10 11 cm Ϫ2 eV Ϫ1 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C -V and G -V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4ϫ10 18 eV Ϫ1 cm Ϫ3 for the as-deposited sample, to 7ϫ10 17 eV Ϫ1 cm Ϫ3 for the annealed sample.

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Section: Resultsmentioning

confidence: 70%

Electrical properties of fluorinated amorphous carbon films

Biswas

Harris

Wang

et al. 2001

Journal of Applied Physics

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“…Due to the presence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The importance in Si technology, the semiconductor/ insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Tataroğlu

Altındal

Bülbül

2005

Microelectronic Engineering

180

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“…We considered that the trap charges have enough energy to escape from the traps located between metal and semiconductor interface in the Si band gap. Also, at high frequencies, f X500 kHz, the charges at the interface states cannot follow an ac signal [13,23,27].…”

Section: Resultsmentioning

confidence: 98%

“…Due to the existence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The important role of these structures in Si technology, the semiconductor/insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%