The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors

Dökme, İlbilge; Altındal, Ş.

doi:10.1016/j.physb.2006.08.049

Cited by 35 publications

(7 citation statements)

References 27 publications

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“…Some authors attributed such a peak to only interface states in the literature. 20,[31][32][33][34] The frequency dependences of the e 0 , e 00 , and tan d of Al/SiO 2 /p-Si SDs at different voltages are presented in Figs. 4(a), 4(b), and 4(c), respectively.…”

Section: Resultsmentioning

confidence: 99%

Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes

Yıldız

Dökme

2011

Journal of Applied Physics

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The dielectric properties and electrical conductivity of Al∕SiO(2)∕p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using experimental C-V and G∕w-V measurements. Experimental results indicated that the voltage dependence of the real part of the dielectric constant (ɛ') and loss tangent (tan δ) characteristics have a peak at each frequency. The values of ɛ' increase with decreasing frequency and tend to be frequency independent in the negative voltage region. However, the values of the dielectric loss (ɛ″) increase with decreasing frequency at each voltage. In contrast, ɛ' and ɛ″ are almost found to decrease, and the ac electrical conductivity (σ(ac)) and the real part of the electric modulus (M') increase, with increasing frequency. In addition, the imaginary part of the electric modulus (M″) showed a peak that shifts to a higher frequency with increasing applied voltage. It can be concluded that interfacial polarization can more easily occur at low frequencies, and consequently the majority of interface states at the Si-SiO(2) interface contribute to the deviation of the dielectric properties of Al∕SiO(2)∕p-Si (MIS) SDs.

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Section: Resultsmentioning

confidence: 99%

Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes

Yıldız

Dökme

2011

Journal of Applied Physics

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“…As seen in Table 1 Table 1 The values of various experimental parameters of MS structure obtained from C to V and G/x-V characteristics at various frequencies at room temperature [33][34][35][36]. It is clearly seen that the values of N SS is lower than literatures, this is because the values of capacitance and conductance are low.…”

Section: Electrical Propertiesmentioning

confidence: 90%

Studies on electrical and the dielectric properties in MS structures

Karataş

2008

Journal of Non-Crystalline Solids

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“…1, at an applied voltage of 1 V, the on-current densities (J on ) of the four samples are of the order decreases with increasing frequency due to the existence of interface traps. 24 At low frequencies, the time constant permits the charge to move in and out of interface trap states in response to an applied signal, that is, an excess capacitance is induced. However, at a sufficiently high frequency, the time constant is too short for the interface trap states to respond and the excess capacitance can be neglected.…”

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Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Yan

et al. 2017

Applied Physics Letters

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By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO 2 /Si substrate significantly improves the diode performance. In contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 10 7 , a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed.The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

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The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors

Cited by 35 publications

References 27 publications

Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes

Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes

Studies on electrical and the dielectric properties in MS structures

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

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