Influence of the SRO as passivation layer on the microwave attenuation losses of the CPWs fabricated on HR-Si

Abstract

In this letter, silicon rich oxide (SRO) is used as the passivation layer of coplanar wave guides (CPWs) fabricated on high resistivity silicon (HR-Si). The microwave performance of the CPWs is evaluated computing the attenuation loss ( ) of the device in the 0.045-50 GHz frequency range. It is shown that for frequencies lower than 5 GHz the losses of CPWs using SRO as a passivation layer are lower than those of CPWs using SiO 2 . It is also shown that using a combination of thermal and CVD SiO 2 , a reduction of the losses of CPWs is obtained.

Analytical characteristic impedance determination method for microstrip lines fabricated on printed circuit boards

“…In traditional extraction methods [12,13], M 0 (l) is assumed to be approximately equal to M(l) as defined in (1), which is only valid for uniform transmission lines without discontinuities [4]. However, when the effect of the parasitic inductance L d is important, this assumption is not valid and a careful analysis of the ABCD matrix has to be performed for the determination of Z c .…”

“…In consequence, several methods have been proposed to obtain Z c . In [3], Z c is indirectly calculated from propagation constant measurements per-formed to lines fabricated in low-loss substrates, whereas a wave-cascading-matrix formulation is proposed in [4] so that this parameter can be extracted directly from measurements performed to a single line. In the latter case, however, the measured line has to be uniform, which restricts the application of the method to coplanar waveguides (CPW) with transversal dimensions comparable to the probe pitch.…”

Review on Microwave and Millimeter Filters Using MEMS Technology

“…Coplanar waveguides on a thin organic substrate can be found in [9]. Also in [10] a study on using silicon rich oxide (SRO) as a passivation layer is demonstrated. In [11] low loss coplanar transmission lines on low resistivity silicon substrates are presented.…”

“…The filter is based on microstrip radial stubs that provide different reactance at different resonant frequencies, selected using MEMS switches. The tuning range of the fabricated filter is 7 GHz (8)(9)(10)(11)(12)(13)(14)(15), which is about 60% of the midband frequency. The pass-band insertion loss was found to be at around 0.5 dB.…”

Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

“…However, the surface charge effect of the Si substrate causes a high attenuation and reduces the effective substrate resistance. Researchers have proposed several methods, such as trap-rich layer passivation [4] and silicon layer passivation [5], [6], to overcome these issues. Ar implantation has been intensively studied to damage the silicon surface and generate traps to reduce the dissipation of RF signal [3], [7]- [9].…”