Influence of the structure of the electrodeposited antimony substrate on indium diffusion

Formation of GaAs by annealing of two-layer Ga-As electrodeposits

“…In particular, we studied the formation of InSb [1], GaSb [2] and InAs [3]. In this paper we extend our research to the formation of GaAs and compare these results with the previous ones, and propose a general discussion of these processes.…”

“…The original temperature-dependent diffusion coefficient data for the Ga-As system will be discussed in connection with other III-V systems, previously studied in our group Ga-Sb [2], In-As [3] and In-Sb [1]; all the relevant results are summarised in Fig. 6.…”

“…In order to prepare the two-layer electrodeposits of group III-V metals it is customary to electrodeposit the group V element as a sublayer and subsequently the group III one as the top-layer [1][2][3]. However, this procedure was not possible in the present case because As tends to react cathodically giving rise to the formation of AsH 3 , as recalled above.…”

“…After previously developed theoretical treatments [1,2], two equations may be considered involving the Ga moles removed by diffusion from the unit surface area, m rem . Indeed, m rem is proportional to both:…”

Structural and mechanistic features of intermetallic materials for lithium batteries☆

“…We are not yet certain about the extent to which iridium is displaced at the surface of the electrode particles or the extent to which lithium and iridium diffuse through the bulk of the particles. In this respect, it is noteworthy that the diffusion of iridium through antimony is among the fastest known for metal systems [13].…”