Influence of the temperature on the properties of sputtered titanium oxide films

Amor, S. Ben; Guedri, L.; Baud, G.; Jacquet, Michel; Ghedira, M.

doi:10.1016/s0254-0584(02)00189-x

Cited by 69 publications

(45 citation statements)

References 32 publications

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“…Sputtering is suitable for low cost and uniform coating on large-area substrates and has been established as a standard technique for preparing TSO films [96][97][98][99][100][101]. Niu et al [102] prepared transparent TiO 2 films on PDMS substrate by DC reactive sputtering.…”

Section: Sputteringmentioning

confidence: 99%

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

2015

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TiO 2 -based thin films and nanomaterials have been fabricated via physical and solution-based techniques by various research groups around the globe. Generally, most applications of TiO 2 involve photocatalytic activity for water and air purification, self-cleaning surfaces, antibacterial activity, and superhydrophilicity. As a widebandgap semiconductor, modified TiO 2 belongs to a class of materials called transparent semiconducting oxides (TSOs), which are simultaneously optically transparent and electrically conductive. TSOs continue to be in high demand for a variety of applications ranging from transparent electronics and sensor devices to light detecting and emitting devices in telecommunications. However, reports on TiO 2 applications as an effective TSO for transparent electronics applications have been limited. In general, TiO 2 is intrinsically an n-type semiconductor but can be doped to have p-type semiconductivity. This provides a very important opportunity to fabricate all-transparent homojunction devices for light harvesting and energy storage. P-type TSOs have recently attracted tremendous interest in the field of active devices for emerging transparent electronics for potential use in ultra-violet light-based solar cells. Therefore, a detailed overview of the synthesis, band structure modification via doping, properties, and applications of modified TiO 2 as n-and p-type TSOs is warranted. This article comprehensively reviews the latest developments. The discussion includes solution-based wet chemical techniques and vacuum-based dry physical techniques fabricating TiO 2 -TSOs. The synthesis of p-TiO 2 in particular is discussed in detail as it may provide interesting breakthroughs in emerging transparent electronics applications. Also, the structural, optical, and electrical properties of TiO 2 are discussed in the context of TSO applications, specifically the defect chemistry of TiO 2 to obtain n-and p-type semiconductivity, which could provide interesting insights into the band structure engineering of TiO 2 for conductivity reversal. Applications of both nand p-type TiO 2 have been reviewed in detail in relation to thin film transparent homo/heterojunction devices, dyesensitized solar cells, electrochromic displays, and other energy-related applications.

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Section: Sputteringmentioning

confidence: 99%

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

2015

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“…For physical vapour deposition (PVD), the actual temperature range of this transition depends on the details of the preparation conditions. For instance, Ben Amor et al [11] found that the anatase phase is stable at 800 • C and the anatase completely transforms to the rutile at 1200 • C. Tian et al [12] reported that annealing at 1100 • C only leads to the growth of the anatase crystallite, and the rutile phase does not appear. Whereas some studies showed that the anatase completely transforms to the rutile phase when annealed at about 900 • C [13].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on the structure and optical properties of sputtered TiO2 films

Zhao

Zhou

Chen

et al. 2011

Journal of Alloys and Compounds

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“…By increasing annealing temperature to 523 K in Fig. 3c, an anatase A(004) crystallographic direction is obvious (Amor et al, 2003). And by increasing annealing temperature to 623 K in presence of uniform oxygen flow, it seems titanium dioxide anatase structure is converted to rutile structure and R(220) crystallographic direction is beginning (Fig.…”

Section: Resultsmentioning

confidence: 90%

Investigation of Nano Structural Changes by Annealing Temperature and Uniform Oxygen Flow on Ti Layers

Kangarlou¹,

Rafizadeh²

2011

American Journal of Applied Sciences

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Problem statement: Ti films of the same thickness, deposition angle (near normal) and deposition rate were deposited on glass substrates at room temperature under UHV conditions. Approach: Different annealing temperatures 423 K, 523 K and 623 K with uniform 7 cm 3 sec −1 , oxygen flow, were used to produce titanium oxide layers. Results: Thin film structures were studied using AFM, XRD and spectrophotometer methods. Roughness of the films changed due to annealing process. Conclusion/Recommendations: The getting property of Ti and annealing temperature can play an important role on the structure of the films.

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Influence of the temperature on the properties of sputtered titanium oxide films

Cited by 69 publications

References 32 publications

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

Effect of annealing temperature on the structure and optical properties of sputtered TiO2 films

Investigation of Nano Structural Changes by Annealing Temperature and Uniform Oxygen Flow on Ti Layers

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