Influence of the temperature on the sensitivity to heat perturbation and on the current noise in VO2 films

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

“…VO 2 channel was observed when the gate voltage was applied in pulses[19]. Stefanovich et al observed both permanent and transient switching of the VO 2 resistance when the gate voltage was continuously ramped up[14].…”

“…Future experiments would consider the use of ultra-thin channel layers possibly grown by epitaxial / layer-by-layer techniques. Despite the fact that the electric field from the gate can affect only a thin superficial layer of VO 2 near the interface with the gate dielectric, there have been a few experiments on gated VO 2 devices reporting non-trivial results even for thick (above 60nm) polycrystalline VO 2 films[14,19,20]. In an early report of Vasiliev et al, a DC gate voltage did not produce any effect on the Source-Drain I-V curves, however the resistance switching in…”

“…Realization of 3-terminal field effect devices with VO 2 as a channel material proved to be a challenging task. Despite several published reports on the I-V measurements of VO 2 in the presence of a gate voltage [14,19,20], an explicit and unambiguous account on 3-terminal VO 2 experiments still remains an attractive goal. In the published reports so far on the electric field effect in gated VO 2 devices [20], there has been little discussion of the physical mechanisms responsible for the observed effects.…”