Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Ruzmetov, Dmitry; Gopalakrishnan, Gokul; Ko, Changhyun; Narayanamurti, V.; Ramanathan, Shriram

doi:10.1063/1.3408899

Cited by 150 publications

(119 citation statements)

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“…Thanks to the improvements in the quality of VO 2 thin films, there has been a growing emphasis on exploring logic and memory device applications of this intriguing phenomenon. Recent efforts on a Mott field effect transistor (MottFET) have demonstrated that VO 2 can be employed as the channel in a MottFET, and the applied external gate voltage switches the channel resistance between the insulating OFF state and the metallic ON state [4][5][6] . There are still several challenges for these so called "Mott devices" 7 , among which is a concern over the repeatability/reproducibility of the Mott transition because the properties of these materials are sensitive to oxygen vacancy concentration, strain, and other factors.…”

mentioning

confidence: 99%

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Kittiwatanakul

Laverock

Newby

et al. 2013

Journal of Applied Physics

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We grew highly textured phase pure VO 2 thin films on c-plane Al 2 O 3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O 2 flow rate increases, the [010] lattice parameter for monoclinic VO 2 was reduced and coincidently distinctive changes in the metalsemiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO 2 , and consequently the MST.

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mentioning

confidence: 99%

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Kittiwatanakul

Laverock

Newby

et al. 2013

Journal of Applied Physics

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“…The R/R 0 increased again with applying V G = 100 V. The origin of such a slow resistance decrease is sometimes related to mechanical relaxation or slow trapping through a purely electrostatic effect. [25][26][27] In our device operating under dry air conditions in Fig. 3(b), such slow changes in resistance were not observed; instead, a steep, small resistance switching of 0.06% occurred, as illustrated in the inset of Fig.…”

Section: Transport Properties Under Humid Conditionsmentioning

confidence: 86%

Research Update: Nanoscale electrochemical transistors in correlated oxides

Kanki

Tanaka

2017

APL Materials

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Large reversible changes of the electronic transport properties of solid-state oxide materials induced by electrochemical fields have received much attention as a new research avenue in iontronics. In this research update, dramatic transport changes in vanadium dioxide (VO2) nanowires were demonstrated by electric field-induced hydrogenation at room temperature through the nanogaps separated by humid air in a field-effect transistor structure with planar-type gates. This unique structure allowed us to investigate hydrogen intercalation and diffusion behavior in VO2 channels with respect to both time and space. Our results will contribute to further strategic researches to examine fundamental chemical and physical properties of devices and develop iontronic applications, as well as offering new directions to explore emerging functions for sensing, energy, and neuromorphologic devices combining ionic and electronic behaviors in solid-state materials.

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“…Vanadium dioxide (VO 2 ) undergoes a rapid and reversible first-order displacement metal-insulator phase transition from low-temperature insulator state to high-temperature metal state at 68°C [1]. The phase transition is reversible from monoclinic to tetragonal rutile changes [2], accompanied by changes in electronic states and crystal lattices make VO 2 thin film phase changes in optical properties, electrical properties magnetic properties and etc [3], so VO 2 in the electrical switch [4] terahertz Device [5] and smart window [6] has great potential.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Vanadium Oxide Thin Films under Different Annealing Conditions

Chang-an

Wang

2018

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract.A novel method was used to fabricate V X O Y thin films by combining magnetron sputtering and vacuum annealing processes on Al 2 O 3 ceramic substrates, which greatly improved the success rate of the experiments and reduced the experimental requirements for the instruments. The substrate was magnetron sputter coated further oxidized in a tube furnace to produce a uniform V 2 O 5 surface, then annealed at high temperatures. XRD and SEM measurements were performed on the obtained films under different annealing conditions. Characterization results of the samples indicate that the highly reproducible VO 2 thin films can be achieved by controlling the process parameters of the magnetron sputtering and vacuum annealing. The experimental results are of great guidance value in VO 2 thin film preparation.

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Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Abstract: Electrostatic control of the metal-insulator transition (MIT) in an oxide

Cited by 150 publications

References 29 publications

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Research Update: Nanoscale electrochemical transistors in correlated oxides

Preparation of Vanadium Oxide Thin Films under Different Annealing Conditions

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