Influence of the texturing structure on the properties of black silicon solar cell

Zhong, Sihua; Liu, Bangwu; Xia, Yang; Lü, Jinhu; Liu, Jie; Shen, Zhonghua; Xu, Zheng; Li, Chaobo

doi:10.1016/j.solmat.2012.10.001

Cited by 60 publications

(44 citation statements)

References 17 publications

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“…Different methods for fabricating b-Si have been introduced, such as laser texturization 20 , plasma immersion ion implantation 14 or metal-assisted wet etching 21 . Here, we use cryogenic deep reactive ion etching (DRIE) as it has multiple advantages: it is fast and inexpensive, there is no dependence on crystalline orientation, and there is no requirement for mask layers 22 .…”

Section: Reflectance and Surface Recombinationmentioning

confidence: 99%

“…Auger recombination can be avoided by using an interdigitated back contact (IBC) solar cell design where the junction and the contacts are placed at the back of the cell 13 , but the recombination problem due to the larger surface area remains unsolved. To date, the surface passivation issue has generally been addressed by rather conventional methods, such as depositing silicon nitride by means of plasmaenhanced chemical vapour deposition 14 or with thermally grown silicon dioxide 15 , resulting in tradeoffs between reflectance and recombination. The final efficiency has therefore been limited by recombination at the increased b-Si surface, and the reported efficiencies have remained well below 20% (18.2% with a surface area of 0.8 cm 2 ) 5 .…”

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confidence: 99%

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Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

et al. 2015

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The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface. Here, we show that a conformal alumina film can solve the issue of surface recombination in black silicon solar cells by providing excellent chemical and electrical passivation. We demonstrate that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very\ud sensitive to front surface passivation. This means that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production. Furthermore, we show that the use of black silicon can result in a 3% increase in daily energy production when compared with a reference cell with the same efficiency, due to its better angular acceptance.Peer ReviewedPostprint (author's final draft

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Section: Reflectance and Surface Recombinationmentioning

confidence: 99%

mentioning

confidence: 99%

Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

et al. 2015

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“…1 While surface recombination has limited bSi electrical performance for years, advances in passivation-and especially the use of atomic layer deposition (ALD)-have made it possible to obtain low surface recombination velocities in such high aspect ratio surfaces. [2][3][4][5] Consequently, research on bSi emitters has been steadily expanding in the past few years, [6][7][8][9][10] and ALD has also demonstrated effective passivation of both phosphorus 11 and boron bSi emitters. 12,13 However, most of the research involving textured emitters has been limited to emitter doping via diffusion, although a number of studies point out the necessity of a compromise in the bSi dimensions in order to limit emitter recombination.…”

Section: Introductionmentioning

confidence: 99%

“…12,13 However, most of the research involving textured emitters has been limited to emitter doping via diffusion, although a number of studies point out the necessity of a compromise in the bSi dimensions in order to limit emitter recombination. 6,7,[14][15][16][17] In fact, excessive diffusion through the bSi increased surface area causes higher Auger recombination than in planar surfaces. 10,18 This phenomenon has been reported to result in high emitter saturation current (J 0e ) and/or in the poor blue response of nanostructured solar cells that integrate emitter on the front side (for instance, PERC and Al-BSF cells).…”

Section: Introductionmentioning

confidence: 99%

“…10,18 This phenomenon has been reported to result in high emitter saturation current (J 0e ) and/or in the poor blue response of nanostructured solar cells that integrate emitter on the front side (for instance, PERC and Al-BSF cells). 6,10,[14][15][16] This issue can be prevented with the help of case-specific approaches. Oh et al identified the doping ranges at which the Auger mechanism dominates over surface recombination, showing that diffusion parameters should be carefully adapted to bSi structures.…”

Section: Introductionmentioning

confidence: 99%

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Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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Recombination processes in passivated boron-implanted black silicon emitters In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities S n through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J 0e ) is obtained in implanted bSi emitters, reaching 20 fA/cm 2 6 5 fA/cm 2 at a sheet resistance of 170 X/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J 0e obtained. Published by AIP Publishing. [http://dx

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