Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation

Aghamalyan, N. R.; Gambaryan, I.; Goulanian, E. Kh.; Hovsepyan, Roman; Kostanyan, R. B.; Petrosyan, S. I.; Vardanyan, E. S.; Zerrouk, A. F.

doi:10.1088/0268-1242/18/6/322

Cited by 93 publications

(38 citation statements)

References 10 publications

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“…Only the (002)-peak is present, which indicates that the film is c-axis oriented perpendicular to the surface. The full width at half maximum (FWHM) of the (002)-peak is 0.43°, very close to those reported in the literature for as-deposited films obtained by electron beam evaporation on (001)-oriented silicon substrate [15,16]. Figure 1 shows the X-ray diffraction patterns of the ZnO (002)-peaks of the as-deposited and annealed ZnO films.…”

Section: Structural and Optical Properties Of Electron Beam Evaporatesupporting

confidence: 80%

“…This resistivity increase can be partially attributed to the introduction of oxygen in ZnO during annealing. For comparison, the resistivity of the ZnO films evaporated by electron beam in vacuum has been found to increase from 10 -2 Ω.cm to 10 -1 Ω.cm and then to 36 Ω.cm, for the as deposited, annealed 1 h at 550 °C and at 800 °C for 3 h, respectively [16].…”

Section: Electrical Properties Of the E-beam Evaporated Znomentioning

confidence: 99%

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Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Asmar¹,

Ferblantier²,

Mailly³

et al. 2005

phys. stat. sol. (c)

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Zinc oxide thin films have been grown on (100)-oriented silicon substrate by reactive e-beam evaporation and rf magnetron sputtering techniques and a comparative study is discussed in this paper. Structural, electrical and optical characteristics have been studied before and after annealing in air by measurements of X-ray diffraction, real parts of the dielectric coefficient, and electrical resistivity. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented with a full width at half maximum (FWMH) lower than 0.5°. The electrical resistivity is about 1011 Ω.cm for magnetron sputtered films and it increases from 10 -2 Ω.cm to about 10 9 Ω.cm after annealing at 750 °C for electron beam evaporated films. Ellipsometry measurements have shown some improvement of the real dielectric coefficient after annealing treatment at 750 °C of the ZnO evaporated by electron beam. The AFM images show that the surfaces of the e-beam evaporated ZnO and of the sputtered ZnO are relatively smooth.

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Section: Structural and Optical Properties Of Electron Beam Evaporatesupporting

confidence: 80%

Section: Electrical Properties Of the E-beam Evaporated Znomentioning

confidence: 99%

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Asmar¹,

Ferblantier²,

Mailly³

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

show abstract

“…Its low price compared with other materials makes it a good candidate for industrial applications [7]. Different growth techniques, such as laser ablation [8], spray pyrolysis [9], sputtering [10], electron beam evaporation [11][12][13] and metal-organic chemical vapour deposition [14] have been developed and used to grow ZnO on a variety of substrates.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Asmar

Juillaguet

Ramonda

et al. 2005

Journal of Crystal Growth

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“…8. It has been demonstrated that the increase in the substrate temperature induces a decrease in the structural disorder decreases and an improvement of the stoichiometry [46]. Song [47] has proposed an explanation for this variation localized donor levels from interstitial zinc atoms states.…”

Section: Optical Propertiesmentioning

confidence: 99%

Study of gallium doping and substrate temperature effects on structural, electrical and optical properties of ZnO semiconductor layers

Mahdhi¹,

Ayadi²,

Hadded³

et al. 2015

J Mater Sci: Mater Electron

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In the present study, zinc oxide doped gallium thin films (ZnO:Ga) at different percentage (0.0, 1.0, 3.0 and 5.0 at.%) were deposited on glass substrates by magnetron sputtering technique using nanocrystalline particles elaborated by sol-gel method. The effect of Ga concentration and the deposition temperature on the structural, electrical and optical properties of the ZnO:Ga thin films were investigated. In the first step, the nanoparticles were synthesized by sol-gel method using supercritical drying in ethyl alcohol. The structural properties studied by X-ray diffractometry indicates that Ga doped ZnO has a polycrystalline hexagonal wurtzite structure with a grain size of about 30 nm. The transmission electron microscopy images have shown that the synthesized GZO is a nanosized powder. Then, thin films were deposited onto glass substrates by rf-magnetron sputtering at various substrate temperatures. The as deposited films with a thickness of about 300 nm were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The crystallite size ranged from 25 to 33 nm, depending on the deposition temperature and Ga at.%. Under particular growth conditions, the investigation shows that the Zn 0.97 Ga 0.03 O sample presents the best properties for potential use in various optoelectronic applications, namely: a single wurtzite phase, low surface roughness (Ra * 5 nm), a high transparency of 90 % in the UV-Vis-NIR, a wide band gap of 3.65 eV and a resistivity of *2.20 9 10 -3 X cm.

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Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation

Cited by 93 publications

References 10 publications

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Study of gallium doping and substrate temperature effects on structural, electrical and optical properties of ZnO semiconductor layers

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