2015
DOI: 10.1007/s10854-015-3663-2
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Study of gallium doping and substrate temperature effects on structural, electrical and optical properties of ZnO semiconductor layers

Abstract: In the present study, zinc oxide doped gallium thin films (ZnO:Ga) at different percentage (0.0, 1.0, 3.0 and 5.0 at.%) were deposited on glass substrates by magnetron sputtering technique using nanocrystalline particles elaborated by sol-gel method. The effect of Ga concentration and the deposition temperature on the structural, electrical and optical properties of the ZnO:Ga thin films were investigated. In the first step, the nanoparticles were synthesized by sol-gel method using supercritical drying in eth… Show more

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Cited by 3 publications
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“…The films have a thickness of a few micrometers and a well-defined crystal structure on the substrate surface (Figure 10.c). These findings suggest that the sputtering synthesis method used in this study is effective for producing high-quality ZnO thin films with good crystalline properties [27].…”
Section: Morphological Characterization By Semmentioning
confidence: 61%
“…The films have a thickness of a few micrometers and a well-defined crystal structure on the substrate surface (Figure 10.c). These findings suggest that the sputtering synthesis method used in this study is effective for producing high-quality ZnO thin films with good crystalline properties [27].…”
Section: Morphological Characterization By Semmentioning
confidence: 61%