Influence of thickness and substrate temperature on electrical and photoelectrical properties of vacuum-deposited CdSe thin films

Padiyan, D. Pathinettam; Marikani, A.; Murali, K. R.

doi:10.1016/s0254-0584(02)00211-0

Cited by 170 publications

(37 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Which, in turn, depend on the increase of grain /particle size of the CdSe films with increasing substrate temperature, such observations have been reported for vacuum evaporated films [17]. A band gap variation in the range of 1.79 -1.62 eV was observed for the vacuum evaporated CdSe films [18] when the substrate temperature was increased from RT to 200 °C. A decrease of band gap from 2.30 to 1.90 eV was observed when the substrate temperature was increased from 0 °C to 85 °C for chemically deposited CdSe thin films [19].…”

Section: Methodssupporting

confidence: 51%

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Ahamed¹,

Balu²,

Nagarethinam³

et al. 2010

Cryst. Res. Technol.

View full text Add to dashboard Cite

CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm -1 and 625 cm -1 respectively.

show abstract

Section: Methodssupporting

confidence: 51%

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Ahamed¹,

Balu²,

Nagarethinam³

et al. 2010

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…Above two regions have been attributed to transitions from a sub band of the valence band to the conduction band. A similar type of variation was also observed by H.A Zayed et al [39] and D.Pathinettam Padiyan et al [40]. In sample with x=0 ml and 10 ml, the plots shown in Fig.2a and 2b exhibits Arrhenius behavior in two different temperature regions (i) (77-125 K) and (ii) (125-300 K).…”

Section: Results and Discussion 31 X-ray Diffraction Studiessupporting

confidence: 86%

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

Vijaya¹,

Rao²,

Nagabhushanam³

et al. 2016

IJERT

View full text Add to dashboard Cite

The bulk Cd0.8Zn0.2S semiconductor compounds doped with different amounts of magnesium(Mg) have been synthesized by controlled co-precipitation method from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 0.02 mol% of Mgx(x=0~50ml). The solution mixture was made alkaline by adding 25% of liquid ammonia. The structural and electrical conductivity properties of Cd0.8Zn0.2S:Mg samples have been studied using X-Ray Diffraction (XRD) and Electrical Conductivity Studies. The samples have polycrystalline nature with hexagonal structure observed in the XRD studies. The average crystalline size varied from 30 to 47 nm and also calculated lattice parameters. The low temperature electrical conductivity measurements of Cd0.8Zn0.2S: Mg compounds were studied in the range of 77-300K by Keithley electrometer. It is observed that the increase in Mg doping concentration will increases the electrical conductivity. The values of activation energy were estimated for all the samples and found that the maximum activation energy at lower temperature range is 69.27 meV.

show abstract

“…Electrolytic deposition [10], spray pyrolysis [11] and vacuum evaporation [12] techniques have been employed for deposition of CdSnSe thin films so far. The thin film growth conditions and thermal annealing process were found effective to achieve the performance devices [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films

Abdelgaied

Mahfoz-Kotb

Hafiz

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Influence of thickness and substrate temperature on electrical and photoelectrical properties of vacuum-deposited CdSe thin films

Cited by 170 publications

References 22 publications

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films

Contact Info

Product

Resources

About