Influence of threading dislocations on diamond Schottky barrier diode characteristics

Akashi, Naoya; Fujimaki, Nanako; Shikata, Shinichi

doi:10.1016/j.diamond.2020.108024

Cited by 20 publications

(3 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Devices fabricated on [001] threading dislocation and threading dislocation with stacking faults (SFs) areas showed very large leakage current compared to the device without dislocations. [139] In addition, the temperature dependence of the leakage current was high for the device with threading dislocations with SFs. Therefore, threading dislocations are detrimental for such devices, regardless of their directions, types, and counts.…”

Section: Line Defectsmentioning

confidence: 99%

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

View full text Add to dashboard Cite

The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

show abstract

Section: Line Defectsmentioning

confidence: 99%

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

View full text Add to dashboard Cite

show abstract

“…9). In general, the breakdown field of diamond Schottky diodes is degraded by number of defects (namely threading dislocations [16]) appearing in the MWPECVD grown low-doped pdrift region. These defects cause a local increase in the reverse current, which can lead to charge carrier multiplication when the electric field increases with reverse bias.…”

Section: Resultsmentioning

confidence: 99%

Power Diode Structures Realized on (113) oriented Boron Doped Diamond

Hazdra,

Laposa,

Šobáň

et al. 2023

ISPS'23 Proceedings

View full text Add to dashboard Cite

Molybdenum, ruthenium, and platinum contacts covered by the gold capping layer were used for preparation of pseudo-vertical Schottky barrier diodes on (113) oriented homoepitaxial boron-doped diamond. After metal deposition, diodes were stabilized by annealing for 20 minutes at 300 ˚C and their IV characteristics were measured at temperatures from 30 to 180 °C. Results show that all three metals can be used to realize Schottky diodes with sufficient forward and blocking capability. Moreover, molybdenum and ruthenium can also be used to create a stable ohmic contact on heavily doped contact p ++ layer. Molybdenum provides optimum properties: a sufficient Schottky barrier height providing low leakage at a level of 10-8 A/cm2 and an acceptable forward voltage drop of 3.80V@JF=1kA/cm2 (measured at 150 °C), the rectifying ratio then reaches 1011 over the entire temperature range under study. Ruthenium contacts exhibit lower Schottky barrier, their forward voltage drop is thus lower (2.85V@JF=1kA/cm2@150 °C), but leakage increases rapidly with temperature. Platinum provides the highest Schottky barrier and guarantees the lowest level of the leakage (<10-8 A/cm2). However, the diodes have poorer forward characteristics: their ideality factor and forward voltage is high (7.35V@JF=1kA/cm2@150 °C). Maximum realizable diode area and achievable breakdown field (0.8MV/cm) then depend on the number of crystal defects (namely threading dislocations) appearing in the diode low-doped drift region.

show abstract

“…15 Devices fabricated on the threading dislocation area and threading dislocation with stacking fault (SF) areas showed a very large leakage current compared with devices without dislocations. 22 A high-quality metal-semiconductor NiTe 2 / MoS 2 heterostructure was grown using a two-step CVD method. Most properties of this heterostructure-based device are better than those of the pristine MoS 2 -based one due to its lower defect density.…”

Section: Introductionmentioning

confidence: 99%