Influence of ultrasound on ionic diffusion process in semiconductors

Кревчик, В. Д.; Muminov, R. A.; Yafasov, A.Ya.

doi:10.1002/pssa.2210630254

Cited by 21 publications

(9 citation statements)

References 3 publications

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“…US influence on crystal point defects was studied for the first time in papers [52][53][54]. Thus, effect of the US decrease of diffusion activation energy and accordingly the increase of diffusion of Li [52] and Cr [53] ions were observed in pollycrystalline silicon. In monocrystal silicon an alkaloid metal K and Na migration stimulated by US from volume to surface was shown in [39].…”

Section: Practical Perspective Of Us Treatment Utilizationmentioning

confidence: 99%

“…The results, obtained in [4,25,[50][51][52][53][54][55][56] which applied to US influence on parameters of semiconductor devices, are summarize in Table. Results A considered aspect of physical and technological effects of active ultrasound in semiconductors is proposed for further usage in Sensor electronics:…”

Section: Practical Perspective Of Us Treatment Utilizationmentioning

confidence: 99%

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Active Ultrasound Effects and Their Future Usage in Sensor Electronics

Olikh

2014

SEMST

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In given paper various phenomena of ultrasound influence on physical characteristics of dislocation crystals of A 2 B 6 type (CdS, ZnS, Cd x Hg 1-x Te) and of dislocation-free crystals (Ge, Si) are systematized; results for light emitting structures (GaAs, GaAlAs, GaP) are given; possibilities of the active ultrasound use in microelectronics device technology are analyzed.Separately dynamic effects (in-situ) are considered. Possible mechanisms of sound induced effects and their applications are discussed. New technological techniques such as ultrasound processing, thermoacoustic efect annealing, ultrasound induced doping and so on find an industrial application. A considered aspect of physical and technological effects of ultrasound in semiconductors is proposed for further usage in Sensor electronics:

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Section: Practical Perspective Of Us Treatment Utilizationmentioning

confidence: 99%

Section: Practical Perspective Of Us Treatment Utilizationmentioning

confidence: 99%

Active Ultrasound Effects and Their Future Usage in Sensor Electronics

Olikh

2014

SEMST

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“…Impurity levels affect the TP-transitions because, as in massive semiconductors, they can act as intermediate virtual states [7]. TP-ionization of impurity centers described in the model of zero-radius potential was considered in [8] for the case of a 2D-system simulated by the "hard-wall" potential.…”

Section: Introductionmentioning

confidence: 99%

Two-Photon Absorption in Nanoheterostructures with D (−)-Centers

Кревчик

Yashin

2005

Russ Phys J

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A two-photon impurity absorption coefficient of the "quantum dot -D (-) -center" complexes synthesized in a transparent dielectric matrix is calculated within the model of zero-radius potential. The evolution of spectral dependence of the absorption coefficient of the nanoheterostructure based on semiconductor CdS x Se 1-x glasses is studied versus the average quantum-dot radius. It is shown that the contribution of the two-photon impurity absorption to the exited two-photon luminescence is fairly significant at a reasonable quantum-dot concentration.

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“…Paper [6] devoted to the study of the influence of relatively weak US on impurity atom migration assumes that the system of impurity atoms is an equilibrium bath with respect to the phonon subsystem which is removed from the equilibrium state. The impurity atoms absorb the energy of nonequilibrium phonons, and this energy is identified with a decrease I ) Prospekt Nauki 47, 252 028 Kiev, Ukraine.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Diffusion of Impurities and Defects in Crystals in Conditions of Ultrasonic and Radiative Excitation of the Crystal Lattice

Pavlovich¹

1993

Physica Status Solidi (b)

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On the basis of the quantum theory of diffusion the influence of crystal lattice excitations (ultrasonic, nuclear irradiation) on the diffusion of impurity atoms is analysed. The effects considered in the paper are determined by two factors: the change of population of the impurity oscillator levels due to interaction with nonequilibrium excitations of the crystal lattice, and the change of the probability of diffusion transitions on the given level. The effects are qualitatively different for heavy impurity atoms whose diffusion is enhanced in nonequilibrium conditions and for light impurity atoms for which the effect of additional localization is possible. Ha OCHOBC KBaHTOBOfi ,4M@$Y3HH IIpOBeAeH aHaJIA3 BJIHRHHX B o 3 6 y~~e H~f i KpHCTaJIJIHYeCKOfi PeIIICTKA (yJIhTpa3ByK, XAepHOe 0 6 n y s e~~e ) Ha ,4A@$Y3HK) IIpHMKHhIX BTOMOB. PaCcMOTpeHHbIe B pa6OTe 3@$eKTbl OIIpeAeJIXIoTCX AByMR @KTOpaMA: A3MeHeHHeM 3aceJIeHHOCTefi YpOBHefi npMMeCHOr0 OCqHJIJIRTOpa, 6naronap~ B3aHMOnefiCTBHW C HePaBHOBeCHhlMA KOJIe6aHHRMA KpHCTaJIJIAYecKOfi PeIIIeTKH, H A3MeHeHHeM BepOXTHOCTA nH@$y3AOHHOrO IIepeXOna IIO AaHHOMY YPOBHIO. 3@@KTbI

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Influence of ultrasound on ionic diffusion process in semiconductors

Cited by 21 publications

References 3 publications

Active Ultrasound Effects and Their Future Usage in Sensor Electronics

Active Ultrasound Effects and Their Future Usage in Sensor Electronics

Two-Photon Absorption in Nanoheterostructures with D (−)-Centers

Enhanced Diffusion of Impurities and Defects in Crystals in Conditions of Ultrasonic and Radiative Excitation of the Crystal Lattice

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