Influence of ultraviolet irradiation on the surface chemistry and tribological properties of water–glycol lubricated Al–Mg–Ti–B coatings

Yao, Kaiwen; Lü, Xiaoling; Feng, Junxiao; Ouyang, Jun; Tian, Yun

doi:10.1016/j.vacuum.2015.04.013

Cited by 4 publications

(2 citation statements)

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“…The binding energy of H 3 BO 3 is ∼194 eV, which is about 1 eV higher than that of B 2 O 3 (∼193 eV). 3,28,31,32 The B 1s spectrum in Fig. 8(a) shows no shift to higher binding energy or broadening of the peak that would suggest boric acid formation.…”

Section: Bn Cap Deposition On B-si-oxidementioning

confidence: 95%

“…It should be noted that the consumption of B 2 O 3 is marked by a decrease in XPS intensity at higher binding energies of 193.8 eV for B 1s and 532.8 eV for O 1s corresponding to B-OH bonds. 28 This suggests that the consumption of oxidized boron is mainly in the form of boric acid (H 3 BO 3 ), but some B 2 O 3 consumption cannot be ruled out. Although the B 2 O 3 films were not exposed to air in between B 2 O 3 and BN cap deposition, the presence of boric acid could be due to H 2 O being used as a precursor during B 2 O 3 film growth.…”

Section: A B 2 O 3 Deposition On Si and Siomentioning

confidence: 99%

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Atomic layer deposition of BN as a novel capping barrier for B2O3

Pilli

Jones

Chugh

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The deposition of boron oxide (B 2 O 3 ) films on Si and SiO 2 substrates by atomic layer deposition (ALD) is of growing interest in microelectronics for shallow doping of high aspect ratio transistor structures. B 2 O 3 , however, forms volatile boric acid (H 3 BO 3 ) upon ambient exposure, requiring a passivation barrier, for which BN was investigated as a possible candidate. Here, the authors demonstrate in situ deposition of BN by sequential BCl 3 /NH 3 reactions at 600 K on two different oxidized boron substrates: (a) B 2 O 3 deposited using BCl 3 /H 2 O ALD on Si at 300 K ("B 2 O 3 /Si") and (b) a boron-silicon oxide formed by sequential BCl 3 /O 2 reactions at 650 K on SiO 2 followed by annealing to 1000 K ("B-Si-oxide"). X-ray photoelectron spectroscopy (XPS) data demonstrate layer-by-layer growth of BN on B 2 O 3 /Si with an average growth rate of ∼1.4 Å/cycle, accompanied by some B 2 O 3 removal during the first BN cycle. In contrast, continuous BN growth was observed on B-Si-oxide without any reaction with the substrate. XPS data also indicate that the oxide/nitride heterostructures are stable upon annealing in ultrahigh vacuum to >1000 K. XPS data, after the exposure of these heterostructures to ambient, indicate a small amount of BN oxidation at the surface NH x species, with no observable hydroxylation of the underlying oxide films. These results demonstrate that BN films, as thin as 13 Å, are potential candidates for passivating boron oxide films prepared for shallow doping applications.

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Section: Bn Cap Deposition On B-si-oxidementioning

confidence: 95%

Section: A B 2 O 3 Deposition On Si and Siomentioning

confidence: 99%