Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si<111> Substrate

Abstract

In this work, the influence of the V/III ratios of the low temperature (LT) AlN interlayer on GaN grown on Si&lt;111&gt; substrate have been investigated. It was found that V/III ratio of LT-AlN interlayer is another important growth parameter, which the crystalline quality of GaN was strongly dependent on. By optimizing the V/III ratio of LT-AlN, the high quality crack-free GaN epilayer with lower dislocation density on Si substrate have been obtained. We attribute it to the different LT-AlN surface morphology originated from optimizing the V/III ratio. Different V/III ratios could result in different GaN growth rates in vertical and lateral direction, which could effectively prevent the threading dislocation from penetrating through the LT-AlN interlayer.

In-situwafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

“…Thus, in the case of GaNbased compounds grown on Si, the stress is known to severely affect the device quality because of wafer bending, dislocation formation, or even cracks. [1] In order to counterbalance the tensile stress, many solutions have been researched such as low-temperature AlN (LT-AlN) interlayer, [2][3][4] GaN/AlN superlattices structure, [5][6][7] single AlGaN interlayer, [8,9] stepgraded AlGaN buffer layer, [10][11][12][13][14] composition-graded AlGaN buffer layer, [15][16][17][18][19] etc.…”

Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes

“…Nitride based light emitting diodes (LEDs) on Si substrate has extensively studied. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Compared with sapphire substrate, Si has many advantages, such as lower cost, larger size, and better thermal and electrical conductivity. But there are still some problems in the research and development of GaN-based LEDs on Si substrate.…”