Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes

Abstract

Vertical InGaN multiple quantum wells light-emitting diodes (LEDs) with through-holes structure were transferred from Si(111) substrate onto the electroplating copper submount successfully. The additional series resistances induced by the AlN buffer layer and other interlayer were shorted by the metals filled through-holes. The LED with through-hole structure shows a low vertical conducting operating voltage and a small series resistance. Combining with substrate removal and copper electroplating technique, the operating voltage at 350 mA and series resistances of the LED were reduce from 5.6 to 5.1 V and 7 to 4 , in comparison with through-hole LED before substrate removal. At the same time, the light output intensity was improved by 75%, which was mainly attributed to both the removal of light absorptive substrate and the substitution for highly thermal conductive copper submount with metal reflector. #

Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate

“…Although GaN-based LEDs on Si substrates have been extensively studied, volume production remains difficult mainly owing to the stress problem between GaN and Si substrates and optical absorption by opaque Si substrates. 1) In order to improve the light efficiency of LEDs on Si substrates, the silicon substrate transferring technique [2][3][4][5][6][7][8][9][10] is mainly adopted to eliminate optical absorption by Si substrates. However, the substrate transferring technique induces a complicated process and results in low yield and high cost.…”