Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers

Choulis, Stelios A.; Hosea, T. J. C.; Klar, Peter J.; Hofmann, Martin R.; Stolz, W.

doi:10.1063/1.1424464

Cited by 18 publications

(11 citation statements)

References 16 publications

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“…As is common in PR, the overlapping transitions broadening our spectra, and reduce the oscillator strength of the observed transitions [8]. Our recent work on an InGaAsN vertical-cavity surface-emitting laser structure, provide more evidences that the different N configurations broaden the gain spectrum (effectively the QW ground state transition) and thus allow the laser to operate over an unusually wide temperature range [9].…”

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confidence: 93%

Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells

Choulis

Hosea

Tomić

et al. 2003

Physica Status Solidi (b)

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We report pressure dependent photomodulated reflectance (PR) measurements on a series of dilute-N InGaNAs/GaAs multiple quantum wells (MQWs). Our experimental results indicate the presence of important N-related disorder effects due to different nearest-neighbour N-cation configurations The quantum well transition energies obtained from the PR spectra are modelled using a realistic 10-band k · p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. By matching experiment with theory we are able to determine accurately the band structure and thus predict some important material parameters for dilute-N InGaAsN alloys.Introduction The ability to calculate effective masses and conduction band offsets is important for designing laser devices. Accurate knowledge of the band structure of the component materials is the first step to identifying these parameters. Although this can be a much easier procedure for well-known materials, it is much more difficult task for novel systems such as InGaNAs [1].InGaNAs differs considerably from the conventional III-V alloys and exhibits striking new properties [2], some of which are reviewed in this paper. In this new class of dilute-N III-N-V semiconductor alloys, modification in the band structure is achieved by N forming localised states which interact with the conduction band (CB) edge of the host semiconductor [3]. To investigate this complex band formation, modulation spectroscopy as a function of pressure, has proved to be a very useful tool [2][3][4]. Previously we reported the dramatic effects of increasing N-incorporation on the quantum well (QW) interband energies including negative bandgap-bowing, smaller total temperature variation, and strong decrease in the rate of pressure-shift (reduced linear shifts with larger sub-linear components) [4]. Here, we seek to gain a more comprehensive picture of the influence of nitrogen on the confined levels in In y Ga 1-y As 1-x N x /GaAs multiple quantum wells (QWs), including the effects of disorder due to different nearest-neighbour N-cation configurations [5]. We determine the band structure of dilute-N InGaNAs/GaAs (0 ≤ x ≤ 4.3%) MQWs, by combined pressure dependent photomodulated reflectance (PR) measurements and theoretical k · p studies. The accurate determination of the band-structure allows us to

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confidence: 93%

Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells

Choulis

Hosea

Tomić

et al. 2003

Physica Status Solidi (b)

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“…However, the strong inhomogeneous broadening is not yet fully understood. Possible explanations could span from fluctuations in quantum well thickness or material composition to contributions of nearest-neighbour configuration fluctuations of N in the GaInAs matrix [16,21,22].…”

Section: Gain Measurements With a Transmission Methodsmentioning

confidence: 99%

“…This could be achieved on the basis of new effects occurring for this material class, e.g. by the controlled use of additional discrete bandgaps in GaInNAs arising from different possible nearest-neighbour configurations of the nitride N in the GaInAs matrix [21,22].…”

Section: Introductionmentioning

confidence: 99%

Experimental analysis of the optical gain and linewidth enhancement factor of GaInNAs/GaAs lasers

Gerhardt¹,

Hofmann²

2004

J. Phys.: Condens. Matter

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The gain and α-factor spectra of a molecular-beam-epitaxy-grown 1.3 µm GaInNAs laser are experimentally determined using the method of Hakki and Paoli and a transmission method. The gain in our structure is due to inhomogeneously broadened band-band transitions but, in general, critically depends on the growth process. The value 2.5 for α at the laser emission wavelength clamps with increasing injection current.

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“…(4). It was demonstrated that this technique can be used also to monitor higher quantum well transitions and to successfully fully characterize the QWs in the active region of VCSELs [9,11,13].…”

Section: Editor'smentioning

confidence: 99%

“…In particular, it was shown how QW transition energies in VCSEL structures can be obtained from monitoring the modulated reflectance signal R R D / as the energies of the QW exciton and cavity mode are made to cross each other e.g. by varying temperature, hydrostatic pressure, position of the probe light on the sample, or incidence angle of the probe light [9][10][11][12][13][14][15]. When the two features overlap or are in close proximity there is a resonance in the amplitude of R R D / from which the QW transition energy can be inferred, even when no feature from the QW itself can be observed in the R R D / spectra [9 -13, 17].…”

Section: Introductionmentioning

confidence: 99%

Characterization of vertical‐cavity surface‐emitting laser structures by modulation spectroscopy: A status report

Klar

Karcher

Metzger

et al. 2005

Physica Status Solidi (a)

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PACS 42.55.Px, 42.55.Sa, 78.30.Fs, 78.66.Fd In recent years, various modulation spectroscopic methods have been successfully applied for characterizing vertical-cavity surface-emitting laser structures. We will survey the field and its present status describing the experiments performed so far, in particular, focussing on photomodulated reflectance and contactless electroreflectance experiments and the corresponding line shape models. We will summarize the successes of the methods, but we will also highlight open questions for future studies.

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Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers

Abstract: Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surfaceemitting laser structure

Cited by 18 publications

References 16 publications

Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells

Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells

Experimental analysis of the optical gain and linewidth enhancement factor of GaInNAs/GaAs lasers

Characterization of vertical‐cavity surface‐emitting laser structures by modulation spectroscopy: A status report

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