Influence of Zn doping on structural, optical and electrical properties of nanocrystalline CdSe thin films

Sharma, Kriti; Al-Kabbi, Alaa S.; Saini, G. S. S.; Tripathi, S. K.

doi:10.1016/j.jallcom.2015.08.038

Cited by 19 publications

(2 citation statements)

References 38 publications

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“…For the band gap determination, it is noted that the overlap between the two types of absorbances (Cu 2 Se and CdSe:Cu:O) is not significant, so that the determination of E g for the dualdoped CdSe matrix is not affected when Tauc's method is employed. The model is described by the following relation [37]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Dual-doped CdSe:Cu:O films grown by sputtering using CdSe–CuO composite targets

Lopez

Rodriguez-Melgarejo

Hernández-Landaverde

et al. 2020

J. Phys.: Condens. Matter

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The effects of the simultaneous incorporation of Cu and O in CdSe films grown by sputtering are presented. The Cu and O contents varied between 1 and 5 at.% in films deposited at 150, 200, 250 and 300 °C. Concentrations of 2, 3, 4 and 5 at.% of CuO in the target promoted the formation of copper selenide clusters immersed within the CdSe:Cu:O host. Energy considerations (enthalpy of formation and bond dissociation energy) were used to discuss the absence of copper oxide and the formation of copper selenide aggregates, as well as the film thickness dependence on the concentration of CuO in the target. The band gap of the films ranged from 1.21 to 2.07 eV, depending upon growth conditions. Significant below-band-gap absorption was observed which was ascribed to the copper selenide micro and nano clusters. Good crystalline quality of the films, for high substrate temperatures, was evidenced through the appearance of overtones of the vibrational longitudinal optic modes detected by Raman micro spectroscopy. It was determined that the electronic properties, optical transmission and electrical conductivity depended on the chemical composition and crystalline structure. This characteristic is relevant because through copper and oxygen co-doping is possible to control these technologically important physical properties of CdSe in a simple and reliable manner.

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Section: Optical Propertiesmentioning

confidence: 99%

Dual-doped CdSe:Cu:O films grown by sputtering using CdSe–CuO composite targets

Lopez

Rodriguez-Melgarejo

Hernández-Landaverde

et al. 2020

J. Phys.: Condens. Matter

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“…This explains why getters with a low-activation temperature are characterized by a high density of grain boundaries [2]. Thanks to a low grain size, activation temperatures as low as 200°C-1h [3] or 160°C-2h [4] for Ti-Zr-V alloy and 200°C-30 min for Zr-Co-Ce alloy [5] have been obtained.…”

Section: Introductionmentioning

confidence: 99%

In-Situ Electrical Characterization of Low Temperature Getter Thin Films Activation

et al. 2018

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Non-evaporable getter materials based on transition metal alloys (Zr, V, Co, Fe, etc…) are reactive materials able to sorb species like O, N, H or C. Integrated as thin films inside MEMS packages under vacuum, they can compete with desorption during bonding and leaks during time. Their thermo-electrical characteristics under varying atmospheres reflect the evolution of the microstructure and is dependent on the sorption properties. In this frame, 4-probes electrical resistivity measurements have been performed on different getter binary alloys under partial vacuum as a function of the temperature to investigate their activation and evolution.

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