Influence of ZnO seed crystals and annealing on the optical quality of low-temperature grown ZnO nanorods

Bekeny, C.; Voss, T.; Hilker, Brent; Gutowski, J.; Hauschild, Robert; Kalt, H.; Postels, B.; Bakin, A.; Waag, A.

doi:10.1063/1.2773632

Cited by 39 publications

(25 citation statements)

References 23 publications

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“…8 54 Our results are even shorter than that ͑70 ps͒ from the samples prepared by the other low temperature ͑90°C͒ aqueous chemical growth technique. 55 Apparently, the value of in our case is so much shorter compared to other reports on the ZNRs. Therefore, we can incipiently conclude that nonradiative recombination process dominates the life time in our case.…”

Section: Resultscontrasting

confidence: 47%

Indirect optical transition due to surface band bending in ZnO nanotubes

Yang

Zhao

Israr

et al. 2010

Journal of Applied Physics

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ZnO nanotubes ͑ZNTs͒ have been successfully evolved from ZnO nanorods ͑ZNRs͒ by a simple chemical etching process. Two peaks located at 382 and 384 nm in the UV emission region has been observed in the room temperature photoluminescence ͑PL͒ spectrum of ZNTs since the surface band bending in ZNTs induces the coexistence of indirect and direct transitions in their emission process. In addition, a strong enhancement of total luminescence intensity at room temperature in ZNTs has also be observed in comparison with that of ZNRs. Both temperature-dependent PL and time-resolved PL results not only further testify the coexistence of indirect and direct transitions due to the surface band bending but also reveal that less nonradiative contribution to the emission process in ZNTs finally causes their stronger luminescence intensity.

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Section: Resultscontrasting

confidence: 47%

Indirect optical transition due to surface band bending in ZnO nanotubes

Yang

Zhao

Israr

et al. 2010

Journal of Applied Physics

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“…By the annealing, no structural changes were found in SEM observation. In contrast to the case of annealed aqueous-grown ZnO nanorods on Si substrates [27], the emission at around 3.332 eV, that was related to structural defects, was not observed when annealed at 700 o C. In the annealed ZnO nanorods at 500 o C, a slight shoulder at I 6 appeared at 6K and increased its relative intensity as increasing measurement temperature. At 77 K phonon replicas of free exciton (FX) emission were clearly observed in comparison with the as-grown ZnO nanorods.…”

Section: Results and Discussion As Shown Incontrasting

confidence: 79%

ZnO nanorods growth on sapphire substrates using aqueous solution with microwave heating and their photoluminescence properties

Ogata

Dobashi

Koike

et al. 2010

Phys. Status Solidi (c)

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ZnO nanorods were grown on a ‐, c ‐ and r ‐plane sapphire substrates using aqueous solution with microwave irradiation heating. ZnO nanorods about 200 nm diameter with c‐axis orientation were grown independently on the orientation of the substrates. Photoluminescence (PL) spectrum at 6 K showed a dominant peak at 3.3609 eV (I6) with the width as narrow as 2.2 meV comparable to that of epitaxially grown single‐crystalline ZnO films. The PL properties were improved by thermal annealing process without generating structural defects. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Such demands are met by low-temperature chemical synthesis methods such as the aqueous chemical growth (ACG) [65][66][67] and the electrochemical deposition process (ECD) [68][69][70][71]. To exploit the large potential of lowtemperature grown nanowires, we systematically studied their fundamental optical properties and relevant microscopic recombination processes [72,73]. Figure 11 shows PL spectra measured at T ¼ 4 K of ZnO nanowires grown with the ACG process on Si(100) substrates at different molar concentrations of the growth solution [72].…”

Section: Plasma Treatment Of Nanowiresmentioning

confidence: 99%

Surface effects and nonlinear optical properties of ZnO nanowires

Voss

Richters

Dev

2010

Physica Status Solidi (b)

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This paper discusses the surface effects and nonlinear optical properties of ZnO nanowires. First, the influence of the large surface-to-volume ratio of the nanowires on their photoluminescence properties is shown. The occurrence of a surface-exciton emission line is demonstrated and its properties are studied in time-integrated and time-resolved photoluminescence measurements. It is further demonstrated that this band is sensitive to surface modifications of the nanowires, such as dielectric and metallic coatings. It is shown that hydrogen can passivate deep defects in ZnO nanowires thereby reducing the defect luminescence and strongly enhancing the near-bandedge excitonic luminescence. The photoluminescence properties of chemically synthesized ZnO nanowires are compared to those of nanowires grown by vapor-transport techniques. The non-linear coefficients of chemically synthesized nanowires are analyzed, and first preliminary measurements of the optical gain of a ZnO nanowire waveguide are analyzed.Zincoxide nanowires under optical excitation.

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Influence of ZnO seed crystals and annealing on the optical quality of low-temperature grown ZnO nanorods

Cited by 39 publications

References 23 publications

Indirect optical transition due to surface band bending in ZnO nanotubes

Indirect optical transition due to surface band bending in ZnO nanotubes

ZnO nanorods growth on sapphire substrates using aqueous solution with microwave heating and their photoluminescence properties

Surface effects and nonlinear optical properties of ZnO nanowires

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