2016
DOI: 10.1109/ted.2016.2597758
|View full text |Cite
|
Sign up to set email alerts
|

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiN x Passivation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 9 publications
(2 citation statements)
references
References 26 publications
0
2
0
Order By: Relevance
“…GaN HEMTs with low-pressure chemical vapor deposition (LPCVD) SiN x passivation have shown high gain/efficiency in power amplifiers by load-pull measurement 28) and a low minimum noise figure. 29) In this study, we investigate the ability of GaN HEMTs to demodulate an on-off keying (OOK) signal on a W-band carrier, demonstrating the promising possibility of a GaN demodulator in a highly integrated transceiver.…”
Section: Introductionmentioning
confidence: 99%
“…GaN HEMTs with low-pressure chemical vapor deposition (LPCVD) SiN x passivation have shown high gain/efficiency in power amplifiers by load-pull measurement 28) and a low minimum noise figure. 29) In this study, we investigate the ability of GaN HEMTs to demodulate an on-off keying (OOK) signal on a W-band carrier, demonstrating the promising possibility of a GaN demodulator in a highly integrated transceiver.…”
Section: Introductionmentioning
confidence: 99%
“…15,16) In this work, a LPCVD deposited SiN layer is applied, expecting to contain fewer defects and better interface than the one deposited by PECVD. [17][18][19][20][21] On the other hand, the current gain cutoff frequency of AlGaN/GaN HEMTs is given by the equation: f T = G m /(2π(C GS + C GD ). 22) Thus, lower dielectric constant between source/drain and gate results in higher cutoff frequency.…”
mentioning
confidence: 99%