2015
DOI: 10.1016/j.cplett.2015.05.001
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Influences of carrier gas flow rate on the morphologies of MoS2 flakes

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Cited by 39 publications
(19 citation statements)
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“…Even gas flow rates further increased from 160 to 280 sccm. The concentration of S vapor was not enough to maintain reactions of MoS 2 synthesizing [ 32 ]. Therefore, the nucleation density of MoS 2 decreased and the shape of MoS 2 domains changed from disconnected film, to large triangles, then to small triangles ( Figure 4 f–h).…”
Section: Resultsmentioning
confidence: 99%
“…Even gas flow rates further increased from 160 to 280 sccm. The concentration of S vapor was not enough to maintain reactions of MoS 2 synthesizing [ 32 ]. Therefore, the nucleation density of MoS 2 decreased and the shape of MoS 2 domains changed from disconnected film, to large triangles, then to small triangles ( Figure 4 f–h).…”
Section: Resultsmentioning
confidence: 99%
“…Controlling the CVD growth parameters to achieve dendritic shaped MoS2 domains increases the number of catalytic sites relative to areal coverage. 41,43 Although it has been reported that the morphology of monolayer MoS2 is variable by modifying the heated temperature and carrier gas flow rate in CVD, 41,44,45 the change in domain shape is constricted within a narrow range and the lateral size is small. Few-layer dendritic MoS2…”
Section: Introductionmentioning
confidence: 99%
“…However, the sulfurization of MoO 3 using the CVD method consists of highly controlled parameters during growth. Our previous works demonstrated that the Ar flow rate in the synthesis can influence the crystal growth, and thus influence the morphologies evolution of MoS 2 flakes [17]. The relationship between MoS 2 morphology and the chemical environment is also another fundamental problem apparent in the growth process have not been clarified.…”
Section: Introductionmentioning
confidence: 98%