Influences of thicknesses and structures of barrier cap layers on As ion profiles and implant damages in HgCdTe epilayers

Shi, Changzhi; Lin, Chun; Wei, Yanfeng; Chen, Lu; Yu, Zhenhua

doi:10.1117/12.2224943

Cited by 1 publication

(2 citation statements)

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“…However, the thin evaporated CdTe barrier layer was proved to generate the BLICE effect [13]. This effect can be suppressed by increasing the thickness of evaporated CdTe layer and adopting the other barrier layer materials [12]. Here, the TEM cross-section images of the double-layer ZnS-coated MCT epilayer (implanted with arsenic at 400 keV) and the double-layer CdTe-coated MCT epilayer (implanted with arsenic at 320 keV) are provided in Figure 12 respectively.…”

Section: Ion Beam Applicationsmentioning

confidence: 99%

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Characterization and Simulation of p-Type Ion Implantation in MCT

Shi¹

2018

Ion Beam Applications

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Ion implantation is one of the key technologies for the fabrication of HgCdTe (MCT) infrared photodiodes. In order to achieve p-on-n type photodiode structure with better performance, the group V elements typically serve as p-type dopants, especially arsenic. In this chapter, ion profiles, defect microstructures, and surface amorphization of implanted group V dopants represented by arsenic into MCT epilayers were characterized by secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM), and X-ray diffraction (XRD), respectively. The influences of some significant technological parameters related to ion implantation, such as implant energy, implant dose, ion beam current, barrier layer structure, on the distributions of ions and induced damages are analyzed. In addition, the high-temperature annealing used to eliminate induced damages and activate the electrical activity of ions was subjected to the as-implanted samples, and the ion diffusion profiles and surface microstructures were acquired and analyzed. Finally, the computer simulations on the collision of incident ions and lattice atoms were carried out to study the distributions of ions and recoil atoms numerically. The simulation results are in good agreement with the experimental data.

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Section: Ion Beam Applicationsmentioning

confidence: 99%

“…Some studies on arsenic ion implantation in MCT have been reported in several literature studies [4,8,11] and our previous work [12][13][14]. Classically, SIMS is used to acquire the distribution profiles of implanted ions, while the microstructures and distributions of induced damages are observed by TEM.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Simulation of p-Type Ion Implantation in MCT

Shi¹

2018

Ion Beam Applications

Self Cite

View full text Add to dashboard Cite

show abstract

Influences of thicknesses and structures of barrier cap layers on As ion profiles and implant damages in HgCdTe epilayers

Cited by 1 publication

References 10 publications

Characterization and Simulation of p-Type Ion Implantation in MCT

Characterization and Simulation of p-Type Ion Implantation in MCT

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