Influences of vacuum annealing induced oxygen defects on the transfer characteristics of a-ITO thin-film transistors

Lu, Wenmo; Wang, Chen; Luo, Qiaomei; Song, Yong Won; Li, Fengnan; Ma, Fang

doi:10.1016/j.matlet.2021.131565

Cited by 4 publications

(1 citation statement)

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“…It is one of the research areas that remains up to date regarding features that are open to development [4,6,7]. Indium Zinc Oxide (InZnO) [8], Indium Tin Oxide (InSnO) [9], Zinc Tin Oxide (ZnSnO) [10], Indium Zinc Tin Oxide (InZnSnO) [11], Indium Gallium Tin Oxid (InGaSnO) [12], and Indium Gallium Zinc Oxide (InGaZnO) [13,14] can be given as examples of multi-cation transparent amorphous oxide semiconductors that have been researched and developed so far. Amorphous InGaZnO (a-IGZO), discovered by Nomura et al in 2004, has been one of the most promising materials in this field [14].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes

Kurtuluş,

Asar,

Özçelik

2023

Phys. Scr.

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The effects of Ar sputtering deposition pressure on the optical, structural, morphological, and electrical properties of amorphous InGaZnO thin films were investigated. The InGaZnO thin films, which have amorphous structures determined by grazing incidence X-Ray diffraction, contained In, Ga, Zn, and O confirmed by secondary ion mass spectrometry method. Additionally, when the thicknesses of the deposited thin films are examined, it was seen that the profilometer measurement results of the crater formed by secondary ion mass spectrometer and scanning electron microscope measurement results are nearly similar, and it is approximately 100 nm. The surface roughness, obtained from Atomic Force Microscopy results, show that decreased up to a particular value with the increase of the working pressure, and then the surface roughness increased. The optical band gaps of the films were obtained in the range of 3.50 eV-3.58 eV via Tauc relation by using the Ultraviolet-Visible measurements carried out in the wavelength range of 200 nm-1100 nm. It was seen that the optical band gap was decreased with the increase in Ar pressure. The electrical properties of InGaZnO thin film-based Schottky diodes, such as the barrier height, ideality factor, saturation current, series resistance, and shunt resistance, have also been studied comprehensively. The electrical results showed that diode properties change with increasing deposition pressure.

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