2021
DOI: 10.3390/app11115259
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Influences of Work Function Changes in NO2 and H2S Adsorption on Pd-Doped ZnGa2O4(111) Thin Films: First-Principles Studies

Abstract: The work function variations of NO2 and H2S molecules on Pd-adsorbed ZnGa2O4(111) were calculated using first-principle calculations. For the bonding of a nitrogen atom from a single NO2 molecule to a Pd atom, the maximum work function change was +1.37 eV, and for the bonding of two NO2 molecules to a Pd atom, the maximum work function change was +2.37 eV. For H2S adsorption, the maximum work function change was reduced from −0.90 eV to −1.82 eV for bonding sulfur atoms from a single and two H2S molecules to a… Show more

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Cited by 8 publications
(3 citation statements)
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“…Furthermore, the energies of the vacuum level and Fermi level, work function, and work function change in our geometric models are shown in Table 1 . In our previous studies [ 37 , 38 , 39 ], the alterations in the work function of CO, NO 2 , and H 2 S molecules upon interaction with the ZnGa 2 O 4 (111) surface align with experimental findings. These changes in the work function signify the overcoming of electron barriers induced by gas adsorption, contributing to the quantitative assessment of gas-sensing characteristics in zinc gallium oxide.…”
Section: Resultssupporting
confidence: 82%
See 1 more Smart Citation
“…Furthermore, the energies of the vacuum level and Fermi level, work function, and work function change in our geometric models are shown in Table 1 . In our previous studies [ 37 , 38 , 39 ], the alterations in the work function of CO, NO 2 , and H 2 S molecules upon interaction with the ZnGa 2 O 4 (111) surface align with experimental findings. These changes in the work function signify the overcoming of electron barriers induced by gas adsorption, contributing to the quantitative assessment of gas-sensing characteristics in zinc gallium oxide.…”
Section: Resultssupporting
confidence: 82%
“…Since InAlN is an n -type semiconductor and acetone gas is a reducing gas, a reduction in depletion width layers is favorable upon exposure to reducing gas. In recent studies, we have successfully illustrated the electron flow from the reducing gas to the n -type semiconductor until the Fermi level equilibrium is achieved [ 37 , 38 , 39 ]. This phenomenon leads to the formation of ohmic contact.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, during gas adsorption reactions, the change in ϕ can identify the sensitivity response of the sensor to detect the particular gas. The work function can be calculated as follows: ϕ = V ( ) ε normalf where V (∞) and ε f represent the electrostatic potential at the point far from the target surface (vacuum) and Fermi level of the system, respectively.…”
Section: Resultsmentioning
confidence: 99%