Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon

Pavlov, S. G.; Portsel, L. М.; Shuman, V. B.; Lodygin, А. N.; Astrov, Yu. A.; Абросимов, Н. В.; Lynch, Stephen Anthony; Tsyplenkov, V. V.; Hübers, Heinz‐Wilhelm

doi:10.1103/physrevmaterials.5.114607

Cited by 11 publications

(17 citation statements)

References 37 publications

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“…To conclude this section: combining the temperature‐dependent Hall effect measurements while simulating the effect of temperature on statistics of n ‐Si in the presence of double donors is a powerful instrument for the quantitative analysis of electrically active magnesium content in Si:Mg. As shown in refs. [51,54]—see Section 4.2—this enables the calibration of the absorption spectra of samples to a Mg concentration, which in turn enables the determination of the parameters of interaction of photons with the magnesium double donors.…”

Section: Sandwich Method: Technology and Characterization Of Samplesmentioning

confidence: 99%

“…Then, the inner electron is assumed to be unaffected by interactions with the outer electron and virtually moves in the Coulomb potential of the 2+ charged ion. [ 51 ] Under this assumption, well‐developed effective mass theory (EMT) may be applied for the calculation of the energy spectra and also dipole moments of intracenter transitions, [ 51 ] resulting in a modified Rydberg‐like para‐ and ortho‐series of energy levels below the bottom of the conduction band.…”

Section: Optically Active Mg Centers and Mg‐related Complexesmentioning

confidence: 99%

“…In ref. [51], a systematic study that focused on finding parameters α and f for the most well‐known double donors in silicon—chalcogens (atomic S, Se and diatomic S 2 , Se 2 centers), as well as the interstitial magnesium in the neutral state—was performed. These parameters were also estimated for a double center Mg*.…”

Section: Optically Active Mg Centers and Mg‐related Complexesmentioning

confidence: 99%

“…The parameters of interaction of electromagnetic radiation with the states of deep donors were compared with the corresponding data known for hydrogen‐like donor centers (see Figure ), where oscillation strengths for intracenter transitions terminating in the 2 p ± and 2 p 0 states for single‐ and two‐electron donors are shown. Among the main results of the study [ 51,54 ] are experimental dependencies of the absorption cross section and oscillator strength on the ionization energy of deep donors. In accordance with the data obtained, a strong deviation of these parameters from the dependence that would be expected from the study of shallow donors in Si was observed.…”

Section: Optically Active Mg Centers and Mg‐related Complexesmentioning

confidence: 99%

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Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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The research interest in deep donors in silicon is due in particular to the quantum structure of such centers; these are promising for application in silicon photonics in the mid-IR range and quantum technologies. At interstitial lattice positions, magnesium atoms create double-charge deep donors. The review is an attempt to summarize the accumulated knowledge on properties of magnesium impurity in silicon. Among methods to obtain magnesium-doped silicon, there is focus on the impurity diffusion from the solid phase using the so-called sandwich method. Techniques to investigate samples include Hall effect measurements, optical absorption, luminescence spectroscopy, and others. The diffusivity of magnesium in silicon and stability of parameters of doped samples under heat treatment is discussed. The energy spectrum of the helium-like magnesium donor is considered in detail. Due to the interaction with other impurities, magnesium forms a variety of donor levels in silicon. These include complexes of Mg with substitutional acceptor atoms B, Al, Ga, In, interstitial Li, and oxygen, as well as numerous donors with a currently unknown nature. Some defects are similar to so-called thermal donors in silicon. The pairing of Mg atoms is proved in samples prepared from the isotope 28 Si-enriched silicon.

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Section: Sandwich Method: Technology and Characterization Of Samplesmentioning

confidence: 99%

Section: Optically Active Mg Centers and Mg‐related Complexesmentioning

confidence: 99%

Section: Optically Active Mg Centers and Mg‐related Complexesmentioning

confidence: 99%

Section: Optically Active Mg Centers and Mg‐related Complexesmentioning

confidence: 99%

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Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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“…Mercury vacancies are mentioned in many papers (see, for example, [16][17][18][19][20]), but currently there is no consensus on the spectrum of hole states for such acceptors, including ionization energies A 0 2 -center and A −1 2 -center, as also is no detailed theory that accurately describes the spectrum of states of " two-charge" centers. The analysis of absorption spectra in semiconductors with two-charge centers is of considerable complexity due to the need to find partial concentrations of charge carriers at different states of such centers, which is a complex problem requiring additional experimental data and their analysis, as, for example, for double donors in silicon [21], where the bond energy of the centers much smaller than the band gap and the problem is unipolar. If it is necessary to take into account carrier concentrations in both zones, as for narrow-bandgap CHT, the complexity of such calculations increases.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the Fermi level in HgCdTe narrow-gap bulk films at different mercury vacancy concentrations

et al. 2022

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We calculate Fermi level position in bulk HgCdTe with cadmium fraction from 19 to 22% as a function of temperature for different concentrations of mercury vacancies forming double-charged acceptors with ionization energies of 11 and 21 meV for neutral and singly charged states respectively. The concentration of free carriers in the bands at different temperatures and the proportion of acceptor centres in different charge states are calculated as well. The results explain the fast temperature quenching of photoconductivity involving the vacancies states. It is also shown that in a p-type material conductivity dependence on temperature includes an exponential growth region with a characteristic energy much greater than a half of the bandgap at zero temperature expected for an intrinsic semiconductor. Keywords: narrow-gap semiconductors, HgCdTe, Fermi level, doubly charged acceptors.

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Diffusion of Magnesium in Czochralski Silicon

Portsel

Lodygin

Абросимов

et al. 2023

Physica Status Solidi (a)

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The diffusion of magnesium in monocrystalline dislocation‐free Czochralski silicon (Cz–Si) with an oxygen concentration of (3–4) × 1017 cm−3 is studied. Initial silicon wafers are doped with Mg by using the sandwich technique. The impurity diffusion profiles are investigated in n‐Si samples by the differential conductivity method. The diffusivity of electrically active magnesium in the temperature range of 1,100–1,250 °C is two to three orders of magnitude lower than the values observed at doping high‐purity silicon crystals grown by the float‐zone method (Fz–Si). The diffusion in Cz–Si is retarded through the trapping of diffusing Mg atoms by oxygen‐related traps. The observed high value of the activation energy of Mg diffusion in investigated samples (4.1 eV) is due—along with the migration energy of interstitial magnesium in the crystal lattice (1.83 eV) —to the significant binding energy of Mg atoms with traps (2.27 eV). A study of the temperature dependence of the Hall effect in bulk‐doped samples reveals two types of deep double donors: interstitial Mg atoms and MgO complexes.

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Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon

Cited by 11 publications

References 37 publications

Magnesium‐Related Donors in Silicon: State of the Art

Magnesium‐Related Donors in Silicon: State of the Art

Temperature dependence of the Fermi level in HgCdTe narrow-gap bulk films at different mercury vacancy concentrations

Diffusion of Magnesium in Czochralski Silicon

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