We compare infrared absorption and Raman spectra of high-quality Ge 1Ϫx Si x bulk crystals (0ϽxϽ0.4). We use this comparison together with lattice-dynamical calculations to report on the behavior of the Ge-Ge phonon at 300 cm Ϫ1 , to identify Ge-Si and Si-Si modes, and to clarify contradictory assignments of certain Ge-Si and Si-Si modes. The Ge-Ge optical phonon observed in Raman spectra at 300 cm Ϫ1 shifts continuously to lower energies with increasing Si content, also for xϽ0.03. This is in good agreement with theoretical calculations, but in contradiction to previously reported experimental data. The Si local-vibrational mode at about 390 cm Ϫ1 is infrared and Raman active. We resolve the local-vibrational modes of the three Si isotopes. Two solely Raman-active phonon modes at about 400 and 455 cm Ϫ1 are unambiguously identified as modes caused by Si-Si pairs. We are able to resolve the two corresponding infrared active modes of this Si-Si pair at 310 and 370 cm Ϫ1 . In the range of about 460 cm Ϫ1 , we can distinguish further modes caused by three and four Si nearest-neighbor atoms in infrared and Raman experiments. Absorption lines at 675, 780, and 845 cm Ϫ1 , not reported hitherto, are identified as combination modes of phonons with the Si local-vibrational mode.