Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Londos, C. A.; Antonaras, G.; Potsidi, M. S.; Aliprantis, D.; Misiuk, A.

doi:10.1007/s10854-006-9101-8

Cited by 8 publications

(6 citation statements)

References 28 publications

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“…Also carbon atoms emanated from precipitates contribute to the increase of the carbonrelated bands. Similar arguments could be put forward for the bands related to interstitial clusters, as for example, the 533 cm À1 band which has been tentatively attributed 48 to a self-interstitial cluster and which appear stronger in the spectra of the initially heat-treated samples. In the latter samples, oxygen precipitates are expected to form.…”

Section: -3supporting

confidence: 59%

“…For example, the 527 cm À1 band has been attributed 47 to the C s C s defect. The 533 cm À1 band has been argued, 48 on the basis of its thermal stability, that has the same origin as the Si-P6 EPR spectrum tentatively correlated 6 with the Si di-interstitial. The band at 544 cm À1 is a complex one arising 48 from the correlation of two bands at 543.5 and 545.5 cm À1 attributed to the C i C s and C i O i defects, correspondingly.…”

Section: Introductionmentioning

confidence: 94%

“…Thus, the 604 cm À1 band of C s and other carbonrelated bands appear stronger. We have previously 48 argued that carbon atoms trapped at some complexes are liberated upon the thermal treatment, increasing the initial concentration of the carbon impurity and, therefore, the concentration of the carbon-related bands. Also carbon atoms emanated from precipitates contribute to the increase of the carbonrelated bands.…”

Section: -3mentioning

confidence: 99%

“…The band at 544 cm À1 is a complex one arising 48 from the correlation of two bands at 543.5 and 545.5 cm À1 attributed to the C i C s and C i O i defects, correspondingly. The 635 cm À1 band was also attributed 48 to the C i C s defect. The 604 cm À1 band is the well-known band of the C s impurity, and the 667 cm À1 band is the optical signature of the CO 2 .…”

Section: Introductionmentioning

confidence: 97%

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Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Londos

Antonaras

Chroneos

2013

Journal of Applied Physics

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The evolution of self-interstitial clusters in silicon (Si), produced by fast neutron irradiation of silicon crystals followed by anneals up to 750 C, is investigated using localised vibrational mode spectroscopy. A band at 582 cm À1 appears after irradiation and is stable up to 550 C was attributed to small self-interstitial clusters (I n , n 4), with the most probable candidate the I 4 structure. Two bands at 713 and 758 cm À1 arising in the spectra upon annealing of the 582 cm À1 band and surviving up to $750 C were correlated with larger interstitial clusters (I n , 5 n 8), with the most probable candidate the I 8 structure or/and with chainlike defects which are precursors of the {311} extended defects. The results illustrate the presence of different interstitial clusters I n , at the various temperature intervals of the material, in the course of an isochronal anneal sequence. As the annealing temperature increases, they evolve from first-order structures with a small number of self-interstitials (I n , n 4) for the temperatures 50 < T < 550 C, to second order structures (I n , 5 n 8) with a larger number of interstitials, for the temperatures 550 < T < 750 C. V C 2013 AIP Publishing LLC. [http://dx.

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Section: -3supporting

confidence: 59%

Section: Introductionmentioning

confidence: 94%

Section: -3mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

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Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Londos

Antonaras

Chroneos

2013

Journal of Applied Physics

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“…2,25,26 Recent investigations have determined the 544 cm À1 band to be a contribution of two bands from the C i O i and C i C s pairs. 27 The C i C s pair anneals out at about 250 C. 2,26 On heavier doses, the C i , C i O i and C i C s pairs act as nucleation sites for self-interstitials leading to the formation of C i (Si I ), C i O i (Si I ), and C i C s (Si I ) complexes. 2,28 It has been reported that the annealing temperature of VO defect decreases with the increase of Ge content of Gedoped Cz-Si, although the annealing temperatures of the C i O i and C i C s pairs are practically unaffected.…”

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confidence: 99%

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Chroneos

Londos

Sgourou

2011

Journal of Applied Physics

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Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen-and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen-and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen-and carbon-related defect clusters in devices.

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Defect engineering strategies for germanium

Chroneos

2013

J Mater Sci: Mater Electron

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Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Cited by 8 publications

References 28 publications

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Defect engineering strategies for germanium

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